Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 degrees C via Chemical Vapor Deposition

doi:10.1002/smll.201805395

	Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 degrees C via Chemical Vapor Deposition
	Zhang, Xuefu 1,2,3; Wu, Tianru 1,2; Jiang, Qi 1,2,3; Wang, Huishan 1,2; Zhu, Hailong 1,2,3; Chen, Zhiying 1,2; Jiang, Ren 4; Niu, Tianchao 5; Li, Zhuojun 1,2; Zhang, Youwei 6; Qiu, Zhijun 6; Yu, Guanghui 1,2; Li, Ang 1,2; Qiao, Shan 1,2; Wang, Haomin 1,2; Yu, Qingkai 1,2; Xie, Xiaoming1,2,3,7
	2019-05
发表期刊	SMALL
ISSN	1613-6810
卷号	15 期号:22
发表状态	已发表
DOI	10.1002/smll.201805395
摘要	The future electronic application of graphene highly relies on the production of large-area high-quality single-crystal graphene. However, the growth of single-crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 degrees C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single-crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 degrees C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 degrees C have a carrier mobility up to approximate to 9700 cm(2) V-1 s(-1) at room temperature. This work shines light on a way toward a much lower temperature growth of high-quality graphene in single crystallinity, which could benefit future electronic applications.
关键词	low-temperature growth single-crystal Cu/Ni(111) films single-crystal graphene ultraflat
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Shanghai Rising-Star Program (A type)[18QA1404800]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000470928000006
出版者	WILEY-V C H VERLAG GMBH
WOS关键词	SUSPENDED GRAPHENE ; LAYER GRAPHENE ; DOMAINS ; COPPER ; EVOLUTION ; OXYGEN
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/48974
专题	物质科学与技术学院_特聘教授组_谢晓明组
通讯作者	Xie, Xiaoming
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Ctr Excellence Superconducting Elect CENSE, 865 Chang Ning Rd, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.East China Normal Univ, Dept Phys, Shanghai 200241, Peoples R China 5.Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, Herbert Gleiter Inst Nanosci, Nanjing 210094, Jiangsu, Peoples R China 6.Fudan Univ, State Key Lab ASIC & Syst, Sch Informat Sci & Technol, Shanghai 200433, Peoples R China 7.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhang, Xuefu,Wu, Tianru,Jiang, Qi,et al. Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 degrees C via Chemical Vapor Deposition[J]. SMALL,2019,15(22).
APA	Zhang, Xuefu.,Wu, Tianru.,Jiang, Qi.,Wang, Huishan.,Zhu, Hailong.,...&Xie, Xiaoming.(2019).Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 degrees C via Chemical Vapor Deposition.SMALL,15(22).
MLA	Zhang, Xuefu,et al."Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 degrees C via Chemical Vapor Deposition".SMALL 15.22(2019).