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Observation of transient trion induced by ultrafast charge transfer in graphene/MoS2 heterostructure
2025-01-27
发表期刊APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN0003-6951
EISSN1077-3118
卷号126期号:4
发表状态已发表
DOI10.1063/5.0244481
摘要

Van der Waals (vdW) heterostructures constructed from transition metal dichalcogenidess provide an ideal platform for exploring various quasiparticle behaviors, with trion-composed of neutral exciton and charged carrier-being a notable example. There are typically three methods to generate trion: electrical doping, chemical doping, and direct optical doping. The first two methods generate static trion, while the last gives rise to transient trion. Here, we present an indirect optical doping approach to generate transient trion via ultrafast charge transfer (CT) and achieve control over the trion-to-exciton ratio by adjusting CT in Gr/MoS2 heterostructure. Furthermore, we demonstrated that dynamics of the transient trion generated with this method, which shows slightly longer lifetime than that of exciton accounted for the Coulomb interactions between trion and charged defect. This study provides fresh perspectives on the construction of desired quasiparticles, dynamical characterization, and the control of the many-body interaction in two-dimensional structure.

关键词Charge transfer Electromagnetic transients Layered semiconductors Semiconductor doping Van der Waals forces Charged carriers Chemical doping Graphenes MoS 2 Neutral excitons Optical- Quasiparticles Trion Ultra-fast Van der Waal
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收录类别SCI ; EI
语种英语
资助项目National Natural Science Foundation of China10.13039/501100001809[92150101] ; National Natural Science Foundation of China (NSFC)[GZB20240418] ; Postdoctoral Fellowship Program of CPSF[2024M751932] ; China Postdoctoral Science Foundation[21JC1402600]
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:001412752700007
出版者AIP Publishing
EI入藏号20250617823967
EI主题词Excitons
EI分类号1301.1.3 Atomic and Molecular Physics ; 1301.4 Solid State Physics ; 701 Electricity and Magnetism ; 712.1 Semiconducting Materials ; 712.1.2 Compound Semiconducting Materials ; 801.3 Physical Chemistry ; 802.2 Chemical Reactions
原始文献类型Journal article (JA)
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/487128
专题物质科学与技术学院
物质科学与技术学院_PI研究组_刘伟民组
物质科学与技术学院_硕士生
通讯作者Ma, Guohong
作者单位
1.Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.Purdue Univ, Dept Chem, W Lafayette, IN 47907 USA
4.Shanghai Univ, Inst Quantum Sci & Technol, Shanghai 200444, Peoples R China
推荐引用方式
GB/T 7714
Wang, Chen,Chen, Yu,Ma, Qiushi,et al. Observation of transient trion induced by ultrafast charge transfer in graphene/MoS2 heterostructure[J]. APPLIED PHYSICS LETTERS,2025,126(4).
APA Wang, Chen.,Chen, Yu.,Ma, Qiushi.,Suo, Peng.,Sun, Kaiwen.,...&Ma, Guohong.(2025).Observation of transient trion induced by ultrafast charge transfer in graphene/MoS2 heterostructure.APPLIED PHYSICS LETTERS,126(4).
MLA Wang, Chen,et al."Observation of transient trion induced by ultrafast charge transfer in graphene/MoS2 heterostructure".APPLIED PHYSICS LETTERS 126.4(2025).
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