上海科技大学知识管理系统

Interfacial ferroelectricity emerges in non-centrosymmetric heterostructures consisting of non-polar van der Waals (vdW) layers. Ferroelectricity with concomitant Coulomb screening can switch topological currents or superconductivity and simulate synaptic response. So far, it has only been realized in bilayer graphene moir & eacute; superlattices, posing stringent requirements to constituent materials and twist angles. Here we report ferroelectricity with concomitant Coulomb screening in different vdW heterostructures free of moir & eacute; interfaces containing monolayer graphene, boron nitride (BN) and transition metal chalcogenide layers. We observe a ferroelectric hysteretic response in a BN/monolayer graphene/BN, as well as in BN/WSe2/monolayer graphene/WSe2/BN heterostructure, but also when replacing the stacking fault-containing BN with multilayer twisted MoS2, a prototypical sliding ferroelectric. Our control experiments exclude alternative mechanisms, such that we conclude that ferroelectricity originates from stacking faults in the BN flakes. Hysteretic switching occurs when a conductive ferroelectric screens the gating field electrically and controls the monolayer graphene through its polarization field. Our results relax some of the material and design constraints for device applications based on sliding ferroelectricity and should enable memory device or the combination with diverse vdW materials with superconducting, topological or magnetic properties.