ShanghaiTech University Knowledge Management System
| A 28-nm 10.4-fJ/b Cryogenic embedded DRAM with 3T1C Gain Cell and MBIST at 4-Kelvin | |
| 2024-08-22 | |
| 会议录名称 | 2024 21ST INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC)
 |
| ISSN | 2163-9612 |
| 页码 | 306-307 |
| 发表状态 | 已发表 |
| DOI | 10.1109/ISOCC62682.2024.10762394 |
| 摘要 | Quantum error correction is essential for achieving large-scale quantum computing. Large-scale quantum state detection requires low-power embedded memory that can operate at 4K. Embedded Dynamic Random Access Memory is a strong candidate for cryogenic memory, offering high density and low power consumption. In this paper, we propose a cryogenic eDRAM using a 28nm CMOS process, which utilizes a 3T1C gain cell structure. Considering the short lifespan of the readout data, the refresh function of eDRAM is eliminated. Additionally, it integrates Memory Built-In Self-Test circuits for various testing purposes. We measured the performance of the eDRAM at 4K and achieved a read power of 4.9fJ/b and a write power of 15.9fJ/b. The median retention time reached 4.8ms, and the bandwidth reached 61.4Gb/s. |
| 关键词 | Associative storage CMOS integrated circuits Cryoelectric storage Dynamic random access storage Integrated circuit testing Photons Quantum electronics Quantum optics Radiation hardening Static random access storage Cryogenic memory EDRAM Embedded DRAM Gain cell Large-scales Low Power Power Quantum Computing Quantum error corrections Quantum state detection |
| 会议名称 | 21st International System-on-Chip Design Conference, ISOCC 2024 |
| 会议地点 | Sapporo, Japan |
| 会议日期 | 19-22 Aug. 2024 |
| URL | 查看原文 |
| 收录类别 | EI |
| 语种 | 英语 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| EI入藏号 | 20245317609774 |
| EI主题词 | Quantum computers |
| EI分类号 | 1001.3.2 ; 1103 ; 1103.1 ; 1301.1.3 ; 1301.1.4 ; 714.2 Semiconductor Devices and Integrated Circuits ; 741.1 Light/Optics |
| 原始文献类型 | Conference article (CA) |
| 来源库 | IEEE |
| 文献类型 | 会议论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/452410 |
| 专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_寇煦丰组 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 |
| 作者单位 | 1.State Key Lab of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China 2.School of Information Science and Technology, ShanghaiTech University, Shanghai, China |
| 推荐引用方式 GB/T 7714 | Jiapei Zheng,Xinkai Nie,Zhenghang Zhi,et al. A 28-nm 10.4-fJ/b Cryogenic embedded DRAM with 3T1C Gain Cell and MBIST at 4-Kelvin[C]:Institute of Electrical and Electronics Engineers Inc.,2024:306-307. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
修改评论
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。