Edge control of graphene domains grown on hexagonal boron nitride

doi:10.1039/c7nr02578e

	Edge control of graphene domains grown on hexagonal boron nitride
	Chen, Lingxiu1,2,3,4 ; Wang, Haomin 1,3; Tang, Shujie 1; He, Li 1,5; Wang, Hui Shan 1,6; Wang, Xiujun 1,3,4; Xie, Hong 1,3; Wu, Tianru 1,3; Xia, Hui 7; Li, Tianxin 7; Xie, Xiaoming1,2,3
	2017-08-28
发表期刊	NANOSCALE
ISSN	2040-3364
卷号	9 期号:32 页码:11475-11479
发表状态	已发表
DOI	10.1039/c7nr02578e
摘要	The edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still challenging. Here we demonstrate edge control of graphene domains on hexagonal boron nitride (h-BN) by modifying the ratio of working-gases. Edge directions were determined with the help of both moire patterns and atomic-resolution images obtained via atomic force microscopy measurements. It is believed that the variation of graphene edges is mainly attributed to different growth rates of armchair and zigzag edges. This work demonstrates a potential approach to fabricate smooth-edge graphene ribbons on h-BN.
收录类别	SCI ; EI
语种	英语
资助项目	National Science Foundation of China[91321311]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000407812000012
出版者	ROYAL SOC CHEMISTRY
EI入藏号	20173404064139
EI主题词	Atomic force microscopy ; Boron nitride ; Electronic properties ; Nitrides
EI分类号	Optical Devices and Systems:741.3 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; SINGLE-CRYSTAL GRAPHENE ; SCANNING-TUNNELING-MICROSCOPY ; ELECTRONIC-PROPERTIES ; NANORIBBONS ; NUCLEATION ; CU
原始文献类型	Article
通讯作者	Wang, Haomin
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/4511
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_谢晓明组物质科学与技术学院_博士生
通讯作者	Wang, Haomin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 3.Chinese Acad Sci, CAS Ctr Excellence Superconducting Elect, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China 5.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China 6.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Chen, Lingxiu,Wang, Haomin,Tang, Shujie,et al. Edge control of graphene domains grown on hexagonal boron nitride[J]. NANOSCALE,2017,9(32):11475-11479.
APA	Chen, Lingxiu.,Wang, Haomin.,Tang, Shujie.,He, Li.,Wang, Hui Shan.,...&Xie, Xiaoming.(2017).Edge control of graphene domains grown on hexagonal boron nitride.NANOSCALE,9(32),11475-11479.
MLA	Chen, Lingxiu,et al."Edge control of graphene domains grown on hexagonal boron nitride".NANOSCALE 9.32(2017):11475-11479.