Orthogonal spin-orbit torque-induced deterministic switching in NiO
2024-10-28
发表期刊APPLIED PHYSICS LETTERS
ISSN0003-6951
EISSN1077-3118
卷号125期号:18
发表状态已发表
DOI10.1063/5.0223716
摘要The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO, which has complex anisotropy. We show that by utilizing two spin-orbit torques (SOTs) from orthogonal currents, one can deterministically switch the magnetic moments of NiO in two electrical distinguishable states that can be read out using the spin Hall magnetoresistance. This deterministic switching relies on the symmetry of SOT on different sublattices, where the sign reversal of magnetic moments leads to constructive torques in the beginning and balanced torques in the end. In addition, we show that the easy-plane anisotropy plays a key role in the switching, which has been ignored in some previous works. The uniform magnetic dynamics in this work provides a clear physical picture in understanding the SOT switching of NiO. Furthermore, the electrical writing and reading function in our device advances the development of AFM-MRAM.
关键词Antiferromagnetism Magnetic logic devices Magnetic moments Magnetic recording Magnetoresistance MRAM devices Antiferromagnetics Antiferromagnets Deterministics Electrical switching Hall magnetoresistance Magnetic random access memory Orthogonal current Spin orbits Sub-lattices Ultra-fast
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收录类别SCI ; EI
语种英语
资助项目National Key Research and Development Program of China10.13039/501100012166[2022YFB4401700] ; National Key R&D Program of China[12104301]
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:001345847600003
出版者AIP Publishing
EI入藏号20244517338591
EI主题词Anisotropy
EI分类号1102.2 ; 1103.1 ; 1301.1.2 ; 701.2 Magnetism: Basic Concepts and Phenomena
原始文献类型Journal article (JA)
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/446040
专题信息科学与技术学院
信息科学与技术学院_硕士生
信息科学与技术学院_博士生
信息科学与技术学院_PI研究组_祝智峰组
通讯作者Zhu, Zhifeng
作者单位
1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
2.Shanghai Engn Res Ctr Energy Efficient & Custom AI, Shanghai 201210, Peoples R China
第一作者单位信息科学与技术学院
通讯作者单位信息科学与技术学院
第一作者的第一单位信息科学与技术学院
推荐引用方式
GB/T 7714
Qiao, Yixiao,Xu, Zhengde,Xu, Zhuo,et al. Orthogonal spin-orbit torque-induced deterministic switching in NiO[J]. APPLIED PHYSICS LETTERS,2024,125(18).
APA Qiao, Yixiao,Xu, Zhengde,Xu, Zhuo,Yang, Yumeng,&Zhu, Zhifeng.(2024).Orthogonal spin-orbit torque-induced deterministic switching in NiO.APPLIED PHYSICS LETTERS,125(18).
MLA Qiao, Yixiao,et al."Orthogonal spin-orbit torque-induced deterministic switching in NiO".APPLIED PHYSICS LETTERS 125.18(2024).
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