ShanghaiTech University Knowledge Management System
| GaN-based resonant-cavity light-emitting diode towards a vertical-cavity surface-emitting laser | |
| 2025-03 | |
| 发表期刊 | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (IF:4.3[JCR-2023],4.4[5-Year]) |
| ISSN | 1558-4542 |
| EISSN | 1558-4542 |
| 卷号 | 31期号:2 |
| 发表状态 | 已发表 |
| DOI | 10.1109/JSTQE.2024.3469978 |
| 摘要 | The letter reports the successful fabrication of GaN-based resonant cavity light-emitting diodes (RCLEDs) with nanoporous (NP) GaN/n-GaN distributed Bragg reflector (DBR). To realize the designed central wavelength and high reflectivity, the precise thickness control of NP GaN layer is extremely critical. By introducing the concept of space charge region in the thickness design of the n++-GaN epitaxial growth for nanoporous GaN, accurate regulation of the centre wavelength of the NP GaN DBR reflection spectrum was achieved. Under light injection condition, longitudinal mode laser was observed at 438 nm, with a full width at half maximum (FWHM) of approximately 0.7 nm. Under electrical injection condition, the FWHM of the RCLED emission peak was about 3.4 nm. |
| 关键词 | DBR lasers Distributed Bragg reflectors Injection lasers Light emitting diodes Microcavities Surface emitting lasers Central wavelength Distributed-bragg-reflectors Full widths at half maximums GaN based Injection conditions Nanoporous GaN Resonant cavity LED Resonant-cavity light-emitting diodes Space charge layers Vertical-cavity surface emitting laser |
| URL | 查看原文 |
| 收录类别 | EI |
| 语种 | 英语 |
| 出版者 | Institute of Electrical and Electronics Engineers Inc. |
| EI入藏号 | 20244017143501 |
| EI主题词 | Gallium nitride |
| EI分类号 | 712.1.2 Compound Semiconducting Materials ; 714 Electronic Components and Tubes ; 714.2 Semiconductor Devices and Integrated Circuits ; 741.3 Optical Devices and Systems ; 744 Lasers ; 744.2.1 ; 744.4 Solid State Lasers |
| 原始文献类型 | Article in Press |
| 来源库 | IEEE |
| 引用统计 | 正在获取...
|
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/427479 |
| 专题 | 物质科学与技术学院 物质科学与技术学院_特聘教授组_杨辉组 物质科学与技术学院_博士生 |
| 作者单位 | 1.School of Physical Science and Technology, ShanghaiTech University, Shanghai, China 2.School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei, China 3.Guangdong Institute of Semiconductor Micro-nano Manufacturing Technology, Foshan, China 4.GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, College of Telecommunications and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China 5.Key Laboratory of Semiconductor Display Materials and Chips, SINANO, CAS, Suzhou, China 6.Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, China |
| 第一作者单位 | 物质科学与技术学院 |
| 第一作者的第一单位 | 物质科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Chuanjie Li,Meixin Feng,Jiaqi Liu,et al. GaN-based resonant-cavity light-emitting diode towards a vertical-cavity surface-emitting laser[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,2025,31(2). |
| APA | Chuanjie Li.,Meixin Feng.,Jiaqi Liu.,Wei Liu.,Xiujian Sun.,...&Hui Yang.(2025).GaN-based resonant-cavity light-emitting diode towards a vertical-cavity surface-emitting laser.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,31(2). |
| MLA | Chuanjie Li,et al."GaN-based resonant-cavity light-emitting diode towards a vertical-cavity surface-emitting laser".IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 31.2(2025). |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
修改评论
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。