上海科技大学知识管理系统

Orbital magnetoelectric effect is closely related to the band topology of bulk crystalline insulators. Typical examples include the half quantized Chern-Simons orbital magnetoelectric coupling in three dimensional (3D) axion insulators and topological insulators, which are the hallmarks of their nontrivial bulk band topology. While the Chern-Simons coupling is well defined only for insulators with zero Chern number, the orbital magnetoelectric effects in 3D Chern insulators with nonzero (layer) Chern numbers are still open questions. In this work, we propose a never-mentioned quantization rule for the layer-resolved orbital magnetoelectric response in 3D Chern insulators, the gradient of which is exactly quantized in unit of e2/h. By theoretical analysis and numerical simulations, we demonstrate that the quantized orbital magnetoelectric response remains robust for various types of interlayer hoppings and stackings, even against disorder and lack of symmetries. We argue that the robustness has a topological origin and protected by layer Chern number. It is thus promising to observe the proposed quantized orbital magnetoelectric response in a slab of 3D Chern insulator thanks to recent experimental developments.