Mechanical Properties of Silicon Nitride in Different Morphologies: In Situ Experimental Analysis of Bulk and Whisker Structures
2024-09
发表期刊MATERIALS (IF:3.1[JCR-2023],3.4[5-Year])
ISSN1996-1944
EISSN1996-1944
卷号17期号:18
发表状态已发表
DOI10.3390/ma17184549
摘要

Silicon nitride (Si3N4) is widely used in structural ceramics and advanced manufacturing due to its excellent mechanical properties and high-temperature stability. These applications always involve deformation under mechanical loads, necessitating a thorough understanding of their mechanical behavior and performance under load. However, the mechanical properties of Si3N4, particularly at the micro- and nanoscale, are not well understood. This study systematically investigated the mechanical properties of bulk Si3N4 and Si3N4 whiskers using in situ SEM indentation and uniaxial tensile strategies. First, nanoindentation tests on bulk Si3N4 at different contact depths ranging from 125 to 450 nm showed significant indentation size effect on modulus and hardness, presumably attributed to the strain gradient plasticity theory. Subsequently, in situ uniaxial tensile tests were performed on Si3N4 whiskers synthesized with two different sintering aids, MgSiN2 and Y2O3. The results indicated that whiskers sintered with Y2O3 exhibited higher modulus and strength compared to those sintered with MgSiN2. This work provides a deeper understanding of the mechanical behavior of Si3N4 at the micro- and nanoscale and offers guidance for the design of high-performance Si3N4 ceramic whiskers. © 2024 by the authors.

关键词Ceramic materials Elastic moduli Nanoindentation Nanowhiskers Sintering Tensile strength Tensile testing Advanced manufacturing Experimental analysis High temperature stability Mechanical Mechanical behavior Microscale and nanoscale Nano indentation Property Sizes effect Strain-gradient plasticity
URL查看原文
收录类别SCI ; EI
语种英语
资助项目National Natural Science Foundation of China[12372113] ; National Natural Science Foundation of China[12372113] ; Centre for High-resolution Electron Microscopy (ChEM)[EM02161943] ; Centre for High-resolution Electron Microscopy (ChEM)[EM02161943] ; Shanghai Science and Technology Plan[21DZ2260400] ; Shanghai Science and Technology Plan[21DZ2260400]
WOS研究方向Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering ; Physics
WOS类目Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:001323841400001
出版者Multidisciplinary Digital Publishing Institute (MDPI)
EI入藏号20244017141927
EI主题词Silicon nitride
原始文献类型Journal article (JA)
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/421410
专题物质科学与技术学院
物质科学与技术学院_硕士生
物质科学与技术学院_博士生
物质科学与技术学院_PI研究组_张洪题组
通讯作者Weide Wang; Hongti Zhang
作者单位
1.Shanghai Key Laboratory of High-Resolution Electron Microscopy, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
2.Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, China
第一作者单位物质科学与技术学院
通讯作者单位物质科学与技术学院
第一作者的第一单位物质科学与技术学院
推荐引用方式
GB/T 7714
Bokang Wang,Tanglong Bai,Weide Wang,et al. Mechanical Properties of Silicon Nitride in Different Morphologies: In Situ Experimental Analysis of Bulk and Whisker Structures[J]. MATERIALS,2024,17(18).
APA Bokang Wang,Tanglong Bai,Weide Wang,&Hongti Zhang.(2024).Mechanical Properties of Silicon Nitride in Different Morphologies: In Situ Experimental Analysis of Bulk and Whisker Structures.MATERIALS,17(18).
MLA Bokang Wang,et al."Mechanical Properties of Silicon Nitride in Different Morphologies: In Situ Experimental Analysis of Bulk and Whisker Structures".MATERIALS 17.18(2024).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Bokang Wang]的文章
[Tanglong Bai]的文章
[Weide Wang]的文章
百度学术
百度学术中相似的文章
[Bokang Wang]的文章
[Tanglong Bai]的文章
[Weide Wang]的文章
必应学术
必应学术中相似的文章
[Bokang Wang]的文章
[Tanglong Bai]的文章
[Weide Wang]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。