Characterization of high-speed writing and reading operations of the superconducting memory cell
2024-10-01
发表期刊SUPERCONDUCTOR SCIENCE & TECHNOLOGY (IF:3.7[JCR-2023],3.5[5-Year])
ISSN0953-2048
EISSN1361-6668
卷号37期号:10
发表状态已发表
DOI10.1088/1361-6668/ad70dc
摘要

Superconducting memory cells that use flux quanta as their storage medium can achieve ultra-fast access times with ultra-low power consumption. However, the data signal generated by a flux quantum memory (FQM) cell is usually too weak and too fast to be measured directly. Here, we present a method to characterize the real-time operation of an FQM cell. The storage loop of the FQM cell, configured with a Nb/NbNX/Nb Josephson junction, was proven the capability to store multiple flux quanta. The readout was demonstrated by a superconducting quantum interference device composed of underdamped Nb/Al-AlOX/Nb Josephson junctions. The writing and reading operations were achieved by a short pulse ranging from 0.1 ns to 2.5 ns, and a constant bit error rate of similar to 2.46% was measured for the fabricated FQM cell. The method presented here can be used to study real-time operation of an FQM cell in a direct manner.

关键词flux quantum memory real time operation bit error rate superconducting memory
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收录类别SCI ; EI
语种英语
资助项目National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809[XDA18000000] ; Strategic Priority Research program of CAS[
WOS研究方向Physics
WOS类目Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:001299491200001
出版者IOP Publishing Ltd
EI入藏号20243616985260
EI主题词Quantum interference devices
EI分类号1103 ; 1202.2 ; 1301.1.3 ; 1301.1.4 ; 708 Electric and Magnetic Materials ; 708.3 Superconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits
原始文献类型Journal article (JA)
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/415903
专题物质科学与技术学院
物质科学与技术学院_特聘教授组_王镇组
通讯作者Chen, Lei; Wang, Zhen
作者单位
1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
通讯作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Wang, Yue,Zhong, Xianghai,Zeng, Junwen,et al. Characterization of high-speed writing and reading operations of the superconducting memory cell[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2024,37(10).
APA Wang, Yue.,Zhong, Xianghai.,Zeng, Junwen.,Pan, Yinping.,Zhang, Denghui.,...&Wang, Zhen.(2024).Characterization of high-speed writing and reading operations of the superconducting memory cell.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,37(10).
MLA Wang, Yue,et al."Characterization of high-speed writing and reading operations of the superconducting memory cell".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 37.10(2024).
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