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Characterization of high-speed writing and reading operations of the superconducting memory cell | |
2024-10-01 | |
发表期刊 | SUPERCONDUCTOR SCIENCE & TECHNOLOGY (IF:3.7[JCR-2023],3.5[5-Year]) |
ISSN | 0953-2048 |
EISSN | 1361-6668 |
卷号 | 37期号:10 |
发表状态 | 已发表 |
DOI | 10.1088/1361-6668/ad70dc |
摘要 | Superconducting memory cells that use flux quanta as their storage medium can achieve ultra-fast access times with ultra-low power consumption. However, the data signal generated by a flux quantum memory (FQM) cell is usually too weak and too fast to be measured directly. Here, we present a method to characterize the real-time operation of an FQM cell. The storage loop of the FQM cell, configured with a Nb/NbNX/Nb Josephson junction, was proven the capability to store multiple flux quanta. The readout was demonstrated by a superconducting quantum interference device composed of underdamped Nb/Al-AlOX/Nb Josephson junctions. The writing and reading operations were achieved by a short pulse ranging from 0.1 ns to 2.5 ns, and a constant bit error rate of similar to 2.46% was measured for the fabricated FQM cell. The method presented here can be used to study real-time operation of an FQM cell in a direct manner. |
关键词 | flux quantum memory real time operation bit error rate superconducting memory |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of Chinahttp://dx.doi.org/10.13039/501100001809[XDA18000000] ; Strategic Priority Research program of CAS[ |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied ; Physics, Condensed Matter |
WOS记录号 | WOS:001299491200001 |
出版者 | IOP Publishing Ltd |
EI入藏号 | 20243616985260 |
EI主题词 | Quantum interference devices |
EI分类号 | 1103 ; 1202.2 ; 1301.1.3 ; 1301.1.4 ; 708 Electric and Magnetic Materials ; 708.3 Superconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/415903 |
专题 | 物质科学与技术学院 物质科学与技术学院_特聘教授组_王镇组 |
通讯作者 | Chen, Lei; Wang, Zhen |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China |
通讯作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Wang, Yue,Zhong, Xianghai,Zeng, Junwen,et al. Characterization of high-speed writing and reading operations of the superconducting memory cell[J]. SUPERCONDUCTOR SCIENCE & TECHNOLOGY,2024,37(10). |
APA | Wang, Yue.,Zhong, Xianghai.,Zeng, Junwen.,Pan, Yinping.,Zhang, Denghui.,...&Wang, Zhen.(2024).Characterization of high-speed writing and reading operations of the superconducting memory cell.SUPERCONDUCTOR SCIENCE & TECHNOLOGY,37(10). |
MLA | Wang, Yue,et al."Characterization of high-speed writing and reading operations of the superconducting memory cell".SUPERCONDUCTOR SCIENCE & TECHNOLOGY 37.10(2024). |
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