Tunable interfacial Rashba spin-orbit coupling in asymmetric Al<sub>x</sub>In<sub>1-x</sub>Sb/InSb/CdTe quantum well heterostructures

doi:10.1063/5.0233964

	Tunable interfacial Rashba spin-orbit coupling in asymmetric Al_xIn_1-xSb/InSb/CdTe quantum well heterostructures
	Ruan, Hanzhi1 ; Zhi, Zhenghang1,3,4 ; Wu, Yuyang 2; Liu, Jiuming1 ; Huang, Puyang1 ; Yao, Shan1 ; Liu, Xinqi5,6 ; Tang, Chenjia5,6 ; Yao, Qi6 ; Sun, Lu1 ; Zhang, Yifan 1; Xiao, Yujie5 ; Che, Renchao 2; Kou, Xufeng1,6
	2025-01-06
发表期刊	APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN	0003-6951
EISSN	1077-3118
卷号	126 期号:1
DOI	10.1063/5.0233964
摘要	We report the manipulation of the Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown AlxIn1-xSb/InSb/CdTe quantum well heterostructures. The effective band bending warrants a robust two-dimensional quantum confinement effect, and the unidirectional built-in electric field arisen from the asymmetric hetero-interfaces leads to a pronounced Rashba SOC strength. By tuning the Al concentration in the top AlxIn1-xSb barrier layer, the optimal structure of x = 0.15 exhibits the largest Rashba coefficient of 0.23 eV & Aring; as well as the highest low-temperature electron mobility of 4400 cm(2) V-1 s(-1). Moreover, quantitative investigations of the weak anti-localization effect further justify the prevailing D'yakonov-Perel spin relaxation mechanism during the charge-to-spin conversion process. Our results underscore the importance of quantum well engineering in shaping the magneto-resistance responses, and the narrow bandgap semiconductor-based heterostructures may serve as a reliable framework for designing energy-efficient spintronic applications.
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收录类别	SCI
语种	英语
资助项目	National Key Research and Development Program of China10.13039/501100012166[2021YFA0715503] ; National Key R&D Program of China[92164104] ; Zhangjiang Lab Strategic Program[2018SHZDZX02] ; Major Project of Shanghai Municipal Science and Technology[SMN180827]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001390823400004
出版者	AIP Publishing
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/415562
专题	信息科学与技术学院物质科学与技术学院信息科学与技术学院_公共科研平台_机电能源与电子器件科研平台信息科学与技术学院_PI研究组_寇煦丰组物质科学与技术学院_硕士生物质科学与技术学院_博士生信息科学与技术学院_硕士生信息科学与技术学院_博士生物质科学与技术学院_公共科研平台_拓扑物理实验室
通讯作者	Che, Renchao; Kou, Xufeng
作者单位	1.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 2.Fudan Univ, Dept Mat Sci, Shanghai 20043, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Beijing 101408, Peoples R China 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 6.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 200031, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院; 上海科技大学
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Ruan, Hanzhi,Zhi, Zhenghang,Wu, Yuyang,et al. Tunable interfacial Rashba spin-orbit coupling in asymmetric Al_xIn_1-xSb/InSb/CdTe quantum well heterostructures[J]. APPLIED PHYSICS LETTERS,2025,126(1).
APA	Ruan, Hanzhi.,Zhi, Zhenghang.,Wu, Yuyang.,Liu, Jiuming.,Huang, Puyang.,...&Kou, Xufeng.(2025).Tunable interfacial Rashba spin-orbit coupling in asymmetric Al_xIn_1-xSb/InSb/CdTe quantum well heterostructures.APPLIED PHYSICS LETTERS,126(1).
MLA	Ruan, Hanzhi,et al."Tunable interfacial Rashba spin-orbit coupling in asymmetric Al_xIn_1-xSb/InSb/CdTe quantum well heterostructures".APPLIED PHYSICS LETTERS 126.1(2025).