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Research on the Bias Network of Energy-Efficient Single Flux Quantum Circuits | |
2019-08 | |
发表期刊 | IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY (IF:1.7[JCR-2023],1.5[5-Year]) |
ISSN | 1051-8223 |
卷号 | 29期号:5 |
发表状态 | 已发表 |
DOI | 10.1109/TASC.2019.2910049 |
摘要 | Superconducting single flux quantum (SFQ) circuits have been shown to offer huge advantages that are ideal for high performance computing applications. These circuits can operate at very high frequencies (tens of GHz) but consume very low power (from nanowatts to microwatts per gate). Energy-efficient SFQ (ERSFQ) circuits, evolved from traditional rapid SFQ (RSFQ) circuits, were invented with the goal of elimination of static power dissipation. When compared with RSFQ circuits, ERSFQ circuits require a new biasing network that includes biasing Josephson junction(s), biasing inductor(s), and feeding Josephson transmission line(s). Some general suggestions on how to design the network have been offered, but a detailed analysis and optimization scenario for the network is still to be provided. In this paper, we first optimize the previously reported DC-biased two-Josephson junction per bit RSFQ shift register circuit, which can be used to provide a more robust, energy-efficient, and high memory capacity storage unit. The simulated power dissipation of 16-bit RSFQ shift register is 0.45 mu W per bit when operating at 21.7 GHz. We then convert the RSFQ-based shift register into an ERSFQ structure and investigate the effects of the ERSFQ bias network on the margins of the ERSFQ circuit. Finally, we propose a more comprehensive optimization method for the ERSFQ biasing network. |
关键词 | Energy dissipation RSFQ ERSFQ PSCAN |
收录类别 | SCI ; SCIE |
语种 | 英语 |
资助项目 | National Science Foundation of China[61601445] |
WOS研究方向 | Engineering ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied |
WOS记录号 | WOS:000467076200001 |
出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
WOS关键词 | SHIFT REGISTER ; RSFQ |
原始文献类型 | Article |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/40878 |
专题 | 物质科学与技术学院_博士生 |
通讯作者 | Ren, Jie |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Ctr Excellence Superconducting Elect, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Guanqun,Ren, Jie,Wu, Yu,et al. Research on the Bias Network of Energy-Efficient Single Flux Quantum Circuits[J]. IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY,2019,29(5). |
APA | Li, Guanqun.,Ren, Jie.,Wu, Yu.,Ying, Liliang.,Niu, Minghui.,...&Wang, Zhen.(2019).Research on the Bias Network of Energy-Efficient Single Flux Quantum Circuits.IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY,29(5). |
MLA | Li, Guanqun,et al."Research on the Bias Network of Energy-Efficient Single Flux Quantum Circuits".IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY 29.5(2019). |
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