Polarity tuning of carbon nanotube transistors by chemical doping for printed flexible complementary metal-oxide semiconductor (CMOS)-like inverters

doi:10.1016/j.carbon.2019.03.003

	Polarity tuning of carbon nanotube transistors by chemical doping for printed flexible complementary metal-oxide semiconductor (CMOS)-like inverters
	Xiao, Hongshan1,2,3,4 ; Xie, Huafei 5; Robin, Malo 1; Zhao, Jianwen 1; Shao, Lin 1; Wei, Miaomiao 1; Portilla, Luis 6; Pecunia, Vincenzo 6; Chen, Shujhih 5; Lee, Chiayu 5; Mo, Lixin 7; Cui, Zheng 1
	2019-06
发表期刊	CARBON
ISSN	0008-6223
卷号	147 页码:566-573
发表状态	已发表
DOI	10.1016/j.carbon.2019.03.003
摘要	Low operation voltages and strong noise immunity are crucial for low-power applications in portable or remote devices. In this work, we present a simple and effective approach to achieve low-voltage and high noise margin complementary metal-oxide semiconductor (CMOS)-like inverters using printed symmetric ambipolar single-walled carbon nanotubes (SWCNT) TFTs on flexible substrates. An ion gel dielectric material with high capacitance is used to achieve small hysteresis and small subthreshold swing at low operation voltages. The printed SWCNT TFTs exhibit a p-type depletion-mode behavior and can be converted into symmetric ambipolar TFTs by chemical doping of triethanolamine into the ion gel inks. The CMOS-like inverters consisting of two ambipolar TFTs exhibit a large noise margin of 72% and 83% at 1/2 V-DD = 0.5 V, voltage gain as high as 23 and power consumption of 0.9 mu W at V-DD = 0.5 V. To our knowledge, they are the best reported values of printed CMOS-like inverter using ion gels as dielectric material at a V-DD of 0.5 V. Additionally, the flexible printed CMOS-like inverters consisting of a p-type and an ambipolar TFTs also work well and showed full rail-to-rail output voltage swing and low power consumption (0.3 mu W at V-DD = 0.75 V). (C) 2019 Elsevier Ltd. All rights reserved.
关键词	Printed electronics Carbon nanotubes Thin film transistors Threshold voltage Triethanolamine Low power electronics CMOS-like inverters
收录类别	EI ; SCIE ; SCI
语种	英语
资助项目	Cooperation Project of Vacuum Interconnect Nano X Research Facility (NANO-X) of Suzhou nanotechnology and Nano-Bionics Institute[H060]
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000468156500063
出版者	PERGAMON-ELSEVIER SCIENCE LTD
EI入藏号	20191406722293
EI主题词	Capacitance ; Carbon nanotubes ; Dielectric devices ; Dielectric materials ; Electric inverters ; Electric power utilization ; Ethanolamines ; Field effect transistors ; Ions ; Low power electronics ; Metallic compounds ; Metals ; MOS devices ; Nanotubes ; Oxide semiconductors ; Semiconductor doping ; Single-walled carbon nanotubes (SWCN) ; Substrates ; Thin film transistors ; Threshold voltage ; Triethanolamine ; Yarn
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Electric Power Systems:706.1 ; Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Organic Compounds:804.1 ; Fiber Products:819.4
WOS关键词	THIN-FILM TRANSISTORS ; N-TYPE ; THRESHOLD VOLTAGE ; LOGIC GATES ; P-TYPE ; CIRCUITS ; CONDUCTION
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/40872
专题	物质科学与技术学院_硕士生
通讯作者	Robin, Malo; Zhao, Jianwen
作者单位	1.Chinese Acad Sci, Printable Elect Res Ctr, Suzhou Inst Nanotech & Nanobion, SEID, 398 Ruoshui Rd,Suzhou Ind Pk, Suzhou 215123, Jiangsu, Peoples R China 2.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Shenzhen China Star Optoelect Technol Co Ltd, 9-2 Tangming Ave, Shenzhen 518132, Guangdong, Peoples R China 6.Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Joint Int Res Lab Carbon Based Funct Mat & Device, 199 Renai Rd, Suzhou 215123, Jiangsu, Peoples R China 7.Beijing Inst Graph Commun, Beijing Engn Res Ctr Printed Elect, 1 Xinghua St, Beijing 102600, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Xiao, Hongshan,Xie, Huafei,Robin, Malo,et al. Polarity tuning of carbon nanotube transistors by chemical doping for printed flexible complementary metal-oxide semiconductor (CMOS)-like inverters[J]. CARBON,2019,147:566-573.
APA	Xiao, Hongshan.,Xie, Huafei.,Robin, Malo.,Zhao, Jianwen.,Shao, Lin.,...&Cui, Zheng.(2019).Polarity tuning of carbon nanotube transistors by chemical doping for printed flexible complementary metal-oxide semiconductor (CMOS)-like inverters.CARBON,147,566-573.
MLA	Xiao, Hongshan,et al."Polarity tuning of carbon nanotube transistors by chemical doping for printed flexible complementary metal-oxide semiconductor (CMOS)-like inverters".CARBON 147(2019):566-573.