Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy

doi:10.1039/c9ra00595a

	Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy
	Shi, Zhiyuan 1,2,3; Lu, Guangyuan 1,3; Yang, Peng 4; Wu, Tianru 1,3; Yin, Weijun 1; Zhang, Chao 1,2,3; Jiang, Ren 1,5; Xie, Xiaoming1,2,3,6
	2019
发表期刊	RSC ADVANCES
ISSN	2046-2069
卷号	9 期号:18 页码:10155-10158
发表状态	已发表
DOI	10.1039/c9ra00595a
摘要	Two-dimensional (2D) hexagonal boron nitride (h-BN) is highly appreciated for its excellent insulating performance and absence of dangling bonds, which could be employed to maintain the intrinsic properties of 2D materials. However, controllable synthesis of large scale multilayer h-BN is still very challenging. Here, we demonstrate chemical vapor deposition (CVD) growth of multilayer h-BN by using iron boride (Fe2B) alloy and nitrogen (N-2) as precursors. Different from the self-limited growth mechanism of monolayer h-BN on catalytic metal surfaces, with sufficient B source in the bulk, Fe2B alloy promotes the controllable isothermal segregation of multilayer h-BN by reacting with active N atoms on the surface of the substrate. Microscopic and spectroscopic characterizations prove the high uniformity and crystalline quality of h-BN with a highly orientated layered lattice structure. The achievement of large scale multilayer h-BN in this work would facilitate its applications in 2D electronics and optoelectronics in the future.
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	China Postdoctoral Science Foundation[2017M621563] ; China Postdoctoral Science Foundation[2018T110415]
WOS研究方向	Chemistry
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000466754600032
出版者	ROYAL SOC CHEMISTRY
EI入藏号	20191506756323
EI主题词	Boron nitride ; Chemical vapor deposition ; Dangling bonds ; III-V semiconductors ; Monolayers ; Multilayer films ; Multilayers ; Nitrides ; Surface segregation
EI分类号	Iron Alloys:545.2 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3
WOS关键词	PRESSURE ; EMISSION ; CRYSTALS
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/40860
专题	物质科学与技术学院_特聘教授组_谢晓明组
通讯作者	Wu, Tianru
作者单位	1.Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, 19 A Yuquan Rd, Beijing 100049, Peoples R China 3.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China 4.Fudan Univ, State Key Lab ASIC & Syst, Sch Informat Sci & Technol, 220 Handan Rd, Shanghai 200433, Peoples R China 5.East China Normal Univ, State Key Lab Precis Spect, Sch Phys & Mat Sci, 3663 N Zhongshan Rd, Shanghai 200062, Peoples R China 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
推荐引用方式 GB/T 7714	Shi, Zhiyuan,Lu, Guangyuan,Yang, Peng,et al. Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy[J]. RSC ADVANCES,2019,9(18):10155-10158.
APA	Shi, Zhiyuan.,Lu, Guangyuan.,Yang, Peng.,Wu, Tianru.,Yin, Weijun.,...&Xie, Xiaoming.(2019).Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy.RSC ADVANCES,9(18),10155-10158.
MLA	Shi, Zhiyuan,et al."Controlled synthesis of uniform multilayer hexagonal boron nitride films on Fe2B alloy".RSC ADVANCES 9.18(2019):10155-10158.