Low excess noise HgCdTe e-SWIR avalanche photodiode operating at high gain and temperature

doi:10.1016/j.infrared.2024.105419

	Low excess noise HgCdTe e-SWIR avalanche photodiode operating at high gain and temperature
	Wang, Zihao1,2 ; Zhu, Liqi 1; Yang, Zezheng2 ; Ge, Huachen2 ; Guo, Huijun 1; Chen, Lu 1; Lin, Chun 1; Chen, Baile2
	2024-09
发表期刊	INFRARED PHYSICS AND TECHNOLOGY (IF:3.1[JCR-2023],3.0[5-Year])
ISSN	1350-4495
EISSN	1879-0275
卷号	141
发表状态	已发表
DOI	10.1016/j.infrared.2024.105419
摘要	The Hg1−xCdxTe material can exhibit a pure electron avalanche when the composition of the Cd is below 0.6. This hole-to-electron impact ionization ratio close to zero results in noiseless gain. In this paper, we present the results on the gain and noise characteristics of the extended short wavelength infrared (e-SWIR) HgCdTe electron-initialed avalanche photodiodes (e-APDs). The e-APD has a Cd composition of 0.4 and a cutoff wavelength of 3.1μm. At 80 K with a bias voltage of −18.5 V, the device achieves a remarkable gain of 1080, with an excess noise factor below 1.6. Furthermore, the device maintains a gain of 550 and an excess noise below 1.6 at 220 K. Notably, this work reports for the first time the low noise performance of the device at high temperatures and high gain. Moreover, we investigate the responsivity and detectivity of the device when operating at the unit gain point. © 2024 Elsevier B.V.
关键词	Avalanche photodiodes Cadmium II-VI semiconductors Impact ionization Infrared radiation Mercury amalgams Semiconductor alloys Electron avalanches Electron impact-ionization Electron-impact ionization Excess noise Gain Gain characteristic High gain High operating temperature Highest temperature Short-wavelength infrared
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	National Natural Science Foundation of China[
WOS研究方向	Instruments & Instrumentation ; Optics ; Physics
WOS类目	Instruments & Instrumentation ; Optics ; Physics, Applied
WOS记录号	WOS:001267573100001
出版者	Elsevier B.V.
EI入藏号	20242816660130
EI主题词	Cadmium alloys
EI分类号	549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 712.1 Semiconducting Materials ; 741.1 Light/Optics ; 802.2 Chemical Reactions
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/401466
专题	信息科学与技术学院信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_硕士生信息科学与技术学院_博士生
通讯作者	Guo, Huijun
作者单位	1.National Key Laboratory of Infrared Detection Technologies, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai; 200083, China; 2.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China
第一作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Wang, Zihao,Zhu, Liqi,Yang, Zezheng,et al. Low excess noise HgCdTe e-SWIR avalanche photodiode operating at high gain and temperature[J]. INFRARED PHYSICS AND TECHNOLOGY,2024,141.
APA	Wang, Zihao.,Zhu, Liqi.,Yang, Zezheng.,Ge, Huachen.,Guo, Huijun.,...&Chen, Baile.(2024).Low excess noise HgCdTe e-SWIR avalanche photodiode operating at high gain and temperature.INFRARED PHYSICS AND TECHNOLOGY,141.
MLA	Wang, Zihao,et al."Low excess noise HgCdTe e-SWIR avalanche photodiode operating at high gain and temperature".INFRARED PHYSICS AND TECHNOLOGY 141(2024).