Investigation of Grain Boundary Effects in Sm0.2Ce0.8O2−x Thin Film Memristors

doi:10.3390/ma17133360

	Investigation of Grain Boundary Effects in Sm0.2Ce0.8O2−x Thin Film Memristors
	Shi WK(施炜凯)1 ; Wang LY(王璐瑶)2 ; Yang N(杨楠)3
	2024-07
发表期刊	MATERIALS (IF:3.1[JCR-2023],3.4[5-Year])
ISSN	1996-1944
EISSN	1996-1944
卷号	17 期号:13
发表状态	已发表
DOI	10.3390/ma17133360
摘要	Cerium-based materials (CeO2-x) are of significant interest in the development of vacancymodulated resistive switching (RS) memory devices. However, the influence of grain boundaries on the performance of memristors is very limited. To fill this gap, this study explores the influence of grain boundaries in cerium-based thin film resistive random-access memory (RRAM) devices. Sm0.2Ce0.8O2-x (SDC20) thin films were deposited on (100)-oriented Nb-doped SrTiO3 (NSTO) and (110)-oriented NSTO substrates using pulsed laser deposition (PLD). Devices constructed with a Pt/SDC20/NSTO structure exhibited reversible and stable bipolar resistive switching (RS) behavior. The differences in conduction mechanisms between single-crystal and polycrystalline devices were confirmed, with single-crystal devices displaying a larger resistance window and higher stability. Combining the results of XPS and I–V curve fitting, it was confirmed that defects near the grain boundaries in the SDC-based memristors capture electrons, thereby affecting the overall performance of the RRAM devices.
关键词	memristor Sm0.2Ce0.8O2−x pulse laser deposition grain boundaries oxygen vacancy
学科门类	工学 ; 工学::材料科学与工程（可授工学、理学学位）
URL	查看原文
收录类别	EI ; SCI
语种	英语
资助项目	National Natural Science Foundation of China[52202267]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001271227000001
出版者	Multidisciplinary Digital Publishing Institute (MDPI)
EI入藏号	20242916703685
EI主题词	Oxygen vacancies
EI分类号	547.2 Rare Earth Metals ; 714.2 Semiconductor Devices and Integrated Circuits ; 744.1 Lasers, General ; 744.9 Laser Applications ; 804 Chemical Products Generally ; 804.2 Inorganic Compounds ; 921.6 Numerical Methods ; 933.1 Crystalline Solids
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/398626
专题	物质科学与技术学院_博士生物质科学与技术学院_PI研究组_杨楠组物质科学与技术学院_PI研究组_刘巍组物质科学与技术学院_硕士生
通讯作者	Yang N(杨楠)
作者单位	1.上海科技大学 2.上海科技大学 3.上海科技大学
第一作者单位	上海科技大学
通讯作者单位	上海科技大学
第一作者的第一单位	上海科技大学
推荐引用方式 GB/T 7714	Shi WK,Wang LY,Yang N. Investigation of Grain Boundary Effects in Sm0.2Ce0.8O2−x Thin Film Memristors[J]. MATERIALS,2024,17(13).
APA	Shi WK,Wang LY,&Yang N.(2024).Investigation of Grain Boundary Effects in Sm0.2Ce0.8O2−x Thin Film Memristors.MATERIALS,17(13).
MLA	Shi WK,et al."Investigation of Grain Boundary Effects in Sm0.2Ce0.8O2−x Thin Film Memristors".MATERIALS 17.13(2024).