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Crystal structure, properties and pressure-induced insulator-metal transition in layered kagome chalcogenides | |
2024-09-11 | |
发表期刊 | JOURNAL OF PHYSICS CONDENSED MATTER
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ISSN | 0953-8984 |
EISSN | 1361-648X |
卷号 | 36期号:36 |
DOI | 10.1088/1361-648X/ad52e0 |
摘要 | Layered materials with kagome lattice have attracted a lot of attention due to the presence of nontrivial topological bands and correlated electronic states with tunability. In this work, we investigate a unique van der Waals (vdW) material system, A 2 M 3 X 4 (A = K, Rb, Cs; M = Ni, Pd; X = S, Se), where transition metal kagome lattices, chalcogen honeycomb lattices and alkali metal triangular lattices coexist simultaneously. A notable feature of this material is that each Ni/Pd atom is positioned in the center of four chalcogen atoms, forming a local square-planar environment. This crystal field environment results in a low spin state S= 0 of Ni2+/Pd2+. A systematic study of the crystal growth, crystal structure, magnetic and transport properties of two representative compounds, Rb2Ni3S4 and Cs2Ni3Se4, has been carried out on powder and single crystal samples. Both compounds exhibit nonmagnetic p-type semiconducting behavior, closely related to the particular chemical environment of Ni2+ ions and the alkali metal intercalated vdW structure. Additionally, Cs2Ni3Se4 undergoes an insulator-metal transition (IMT) in transport measurements under pressure up to 87.1 GPa without any structural phase transition, while Rb2Ni3S4 shows the tendency to be metalized. © 2024 IOP Publishing Ltd. |
关键词 | Crystal structure Honeycomb structures Inorganic compounds Metal insulator transition Rubidium compounds Selenium compounds Single crystals Transition metals Crystals structures Insulator metal transition Kagome lattice Layered material Layered Structures Material systems Structure property Topological bands Tunabilities Van der Waal |
URL | 查看原文 |
收录类别 | EI |
语种 | 英语 |
出版者 | Institute of Physics |
EI入藏号 | 20242516266338 |
EI主题词 | Nickel compounds |
EI分类号 | 408.2 Structural Members and Shapes ; 531 Metallurgy and Metallography ; 804.2 Inorganic Compounds ; 933.1 Crystalline Solids ; 933.1.1 Crystal Lattice |
原始文献类型 | Journal article (JA) |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/395966 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_齐彦鹏组 |
通讯作者 | Zhong, Ruidan |
作者单位 | 1.Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai; 201210, China; 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 3.School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai; 200240, China; 4.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China; 5.Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai; 201210, China |
推荐引用方式 GB/T 7714 | Du, Hong,Zheng, Yu,Pei, Cuiying,et al. Crystal structure, properties and pressure-induced insulator-metal transition in layered kagome chalcogenides[J]. JOURNAL OF PHYSICS CONDENSED MATTER,2024,36(36). |
APA | Du, Hong,Zheng, Yu,Pei, Cuiying,Yim, Chi-Ming,Qi, Yanpeng,&Zhong, Ruidan.(2024).Crystal structure, properties and pressure-induced insulator-metal transition in layered kagome chalcogenides.JOURNAL OF PHYSICS CONDENSED MATTER,36(36). |
MLA | Du, Hong,et al."Crystal structure, properties and pressure-induced insulator-metal transition in layered kagome chalcogenides".JOURNAL OF PHYSICS CONDENSED MATTER 36.36(2024). |
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