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Gate-Tunable Critical Current of the Three-Dimensional Niobium Nano-Bridge Josephson Junction | |
2023-08-02 | |
状态 | 已发表 |
摘要 | Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned using a gate voltage (Vg). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nano-bridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current (Ic) of this structure can be tuned to zero by increasing Vg. The critical gate voltage Vgc was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned using Vg in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels. |
关键词 | Josephson junction Gate voltage Critical current 3D nano-bridge junction |
DOI | arXiv:2308.00953 |
相关网址 | 查看原文 |
出处 | Arxiv |
WOS记录号 | PPRN:74223452 |
WOS类目 | Physics, Condensed Matter |
资助项目 | National Natural Science Foundation of China[ |
文献类型 | 预印本 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/381310 |
专题 | 物质科学与技术学院 物质科学与技术学院_特聘教授组_王镇组 |
通讯作者 | Chen, Lei; Wang, Zhen |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Natl Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China |
推荐引用方式 GB/T 7714 | Yu, Shujie,Chen, Lei,Pan, Yinping,et al. Gate-Tunable Critical Current of the Three-Dimensional Niobium Nano-Bridge Josephson Junction. 2023. |
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