Nonsymmorphic symmetry protected nodal lines in layered topological semimetal Ta3GeTe6

doi:10.1063/5.0201889

	Nonsymmorphic symmetry protected nodal lines in layered topological semimetal Ta3GeTe6
	Ma, Xiang 1; Wang, Kaipu2 ; Cao, Jin 3; Zheng, Bo 1; Zhao, Yiwei 4; Wang, Changlong 1; Tan, Haige 1; Li, Ruimin 1; Wu, Junjie 1; Xi, Chuanying 5; Wang, Lan 6; Yang, Shengyuan A.3; Liu, Zhongkai2 ; Lu, Yalin 1,7; Xiang, Bin 1,7
	2024-04-08
发表期刊	APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year])
ISSN	0003-6951
EISSN	1077-3118
卷号	124 期号:15
发表状态	已发表
DOI	10.1063/5.0201889
摘要	Topological semimetals have garnered significant attention due to their distinctive physical properties. However, the ideal material platforms for studying these phenomena remain limited. Here, we report the synthesis and nontrivial topological properties of high-quality van der Waals material Ta3GeTe6. Angle-resolved photoemission spectroscopy studies performed systematically on the as-grown Ta3GeTe6 single crystal along different high-symmetry directions reveal the formation of two nodal lines located near 0.07 and 0.55 eV below EF along the loop X-U-R-S, which arises from band crossings protected by nonsymmorphic symmetry. Furthermore, the nodal lines near the Fermi level along the S-R and S-X directions exhibit a flat feature. The discovery of this material enriches the family of topological nodal line semimetals and provides a promising platform for future investigations into exotic electronic correlation phenomena and potential device applications. © 2024 Author(s).
关键词	Crystal symmetry Germanium alloys Germanium compounds Photoelectron spectroscopy Single crystals Tellurium compounds Van der Waals forces Angle resolved photoemission spectroscopy As-grown Electronic correlation High quality High symmetry Nodal line Potential device applications Symmetry direction Topological properties Van der Waal
URL	查看原文
收录类别	EI ; SCI
语种	英语
资助项目	NSFC["52373309","12374177","92365113"] ; University of Macau["SRG2023-00057-IAPME","KY2060000177"] ; null[2021ZD0302800]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:001199852000011
出版者	American Institute of Physics
EI入藏号	20241615940223
EI主题词	Topology
EI分类号	549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 801.4 Physical Chemistry ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931.3 Atomic and Molecular Physics ; 933.1 Crystalline Solids ; 933.1.1 Crystal Lattice
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/364687
专题	物质科学与技术学院物质科学与技术学院_PI研究组_柳仲楷组物质科学与技术学院_博士生
通讯作者	Liu, Zhongkai; Lu, Yalin; Xiang, Bin
作者单位	1.Department of Materials Science and Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei; 230026, China 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China 3.Research Laboratory for Quantum Materials, IAPME, University of Macau, China 4.State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Shaanxi, Xi'an; 710049, China 5.Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Sciences, Chinese Academy of Science, Hefei; 230031, China 6.Lab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Anhui, Hefei; 230009, China 7.Hefei National Laboratory, University of Science and Technology of China, Hefei; 230088, China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Ma, Xiang,Wang, Kaipu,Cao, Jin,et al. Nonsymmorphic symmetry protected nodal lines in layered topological semimetal Ta3GeTe6[J]. APPLIED PHYSICS LETTERS,2024,124(15).
APA	Ma, Xiang.,Wang, Kaipu.,Cao, Jin.,Zheng, Bo.,Zhao, Yiwei.,...&Xiang, Bin.(2024).Nonsymmorphic symmetry protected nodal lines in layered topological semimetal Ta3GeTe6.APPLIED PHYSICS LETTERS,124(15).
MLA	Ma, Xiang,et al."Nonsymmorphic symmetry protected nodal lines in layered topological semimetal Ta3GeTe6".APPLIED PHYSICS LETTERS 124.15(2024).