One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories

doi:10.1021/acs.nanolett.4c00423

	One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories
	Qiao, Shuo; Qiu, Yuanyuan; Lu, Yue; Wang, Zihan; Yuan, Mingxuan; Ji, Qingqing
	2024-04-08
发表期刊	NANO LETTERS
ISSN	4498 - 4504
EISSN	1530-6992
卷号	24 期号:15 页码:4498-4504
发表状态	已发表
DOI	10.1021/acs.nanolett.4c00423
摘要	Dimensionality of materials is closely related to their physical properties. For two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2), converting them from 2D nanosheets to one-dimensional (1D) nanoscrolls could contribute to remarkable electronic and optoelectronic properties, yet the rolling-up process still lacks sufficient controllability, which limits the development of their device applications. Herein we report a modified solvent evaporation-induced rolling process that halts at intermediate states and achieve MoS2 nanoscrolls with high yield and decent axial uniformity. The accordingly fabricated nanoscroll memories exhibit an on/off ratio of ∼104 and a retention time exceeding 103 s and can realize multilevel storage with pulsed gate voltages. Such open-end, high-curvature, and hollow 1D nanostructures provide new possibilities to manipulate the hysteresis windows and, consequently, the charge storage characteristics of nanoscale field-effect transistors, thereby holding great promise for the development of miniaturized memories. © 2024 American Chemical Society.
关键词	Charge trapping Field effect transistors Molybdenum disulfide 2d material Charge-trapping Device application Nanoscrolls One-dimensional Optoelectronics property Rolling process Rolling up Solvent evaporation Two-dimensional
URL	查看原文
收录类别	EI ; SCI
语种	英语
资助项目	National Natural Science Foundation of China[22205142] ; National Natural Science Foundation of China["21ZR1442100","21PJ1410200"] ; Double First-Class Initiative Fund of ShanghaiTech University["EM02161943","AIC10112914"] ; Center for High-Resolution Electron Microscopy (CyEM)[SMN180827]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001200648600001
出版者	American Chemical Society
EI入藏号	20241515902654
EI主题词	Layered semiconductors
EI分类号	712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 804.2 Inorganic Compounds ; 931.3 Atomic and Molecular Physics ; 933.3 Electronic Structure of Solids
原始文献类型	Article in Press
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/364623
专题	物质科学与技术学院物质科学与技术学院_硕士生物质科学与技术学院_博士生物质科学与技术学院_PI研究组_纪清清组
通讯作者	Ji, Qingqing
作者单位	ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Qiao, Shuo,Qiu, Yuanyuan,Lu, Yue,et al. One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories[J]. NANO LETTERS,2024,24(15):4498-4504.
APA	Qiao, Shuo,Qiu, Yuanyuan,Lu, Yue,Wang, Zihan,Yuan, Mingxuan,&Ji, Qingqing.(2024).One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories.NANO LETTERS,24(15),4498-4504.
MLA	Qiao, Shuo,et al."One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories".NANO LETTERS 24.15(2024):4498-4504.