Improved polarization retention in epitaxial BiFeO3 thin films induced by strain relaxation
2023-10-30
发表期刊APPLIED SURFACE SCIENCE (IF:6.3[JCR-2023],5.9[5-Year])
ISSN0169-4332
卷号635
发表状态已发表
DOI10.1016/j.apsusc.2023.157703
摘要

This study investigated the impact of lattice mismatch strain (LMS) on the polarization retention of epitaxial ferroelectric BiFeO3 (BFO) thin films. The application of varying degrees of LMS on the BFO films was achieved by tuning the film thickness, which was verified through X-ray diffraction and reciprocal space mapping. As the strain was gradually eliminated, the film demonstrated a more saturated hysteresis loop with a reduced negative coercive electric field. Additionally, a significant increase in polarization retention was observed with increasing film thickness, strongly indicating the crucial role of LMS in driving the formation of preferred polarization, which is intimately connected with the built-in field induced by oxygen vacancies-relevant space charge alignment. Moreover, the anisotropic LMS state of the BFO films was utilized to horizontally reverse local polarization in a sub-micrometer scale, revealing that strain accelerates the back-switching of polarization to eliminate the artificially created ferroelastic domain walls. To counteract the strain effect, charge injection of electrons was proposed to enhance the retention of switched polarization by fully suppressing the built-in field and pinning the artificially created domain walls. The findings provide valuable insights into the impact of strain on polarization retention for the development of ferroelectric memories. © 2023 Elsevier B.V.

关键词Bismuth compounds Domain walls Electric fields Ferroelectric films Ferroelectricity Film thickness Iron compounds Lattice mismatch Thin films Walls (structural partitions) BiFeO 3 thin films Built-in fields Coercive electric field Epitaxial ferroelectric Film-thickness Mismatch strain Polarization retention Reciprocal space mapping Saturated hysteresis loops X- ray diffractions
收录类别EI
语种英语
出版者Elsevier B.V.
EI入藏号20232414210144
EI主题词Polarization
EI分类号408.2 Structural Members and Shapes ; 701.1 Electricity: Basic Concepts and Phenomena ; 708.1 Dielectric Materials ; 933.1.1 Crystal Lattice
原始文献类型Journal article (JA)
引用统计
被引频次:10[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/359937
专题物质科学与技术学院_硕士生
通讯作者Jiang, Jun
作者单位
1.State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai; 200433, China;
2.Center for Transformative Science, ShanghaiTech University, Shanghai; 201210, China;
3.Department of Mechanical Engineering & Mechanics, Drexel University, Philadelphia; PA; 19104-2875, United States
推荐引用方式
GB/T 7714
Tan, Xiaojun,Sun, Xingrui,Jiang, Jun,et al. Improved polarization retention in epitaxial BiFeO3 thin films induced by strain relaxation[J]. APPLIED SURFACE SCIENCE,2023,635.
APA Tan, Xiaojun,Sun, Xingrui,Jiang, Jun,&Chen, Dongfang.(2023).Improved polarization retention in epitaxial BiFeO3 thin films induced by strain relaxation.APPLIED SURFACE SCIENCE,635.
MLA Tan, Xiaojun,et al."Improved polarization retention in epitaxial BiFeO3 thin films induced by strain relaxation".APPLIED SURFACE SCIENCE 635(2023).
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