Broadband Heterojunction AlGaAs/GaAs PIN Diode Switch Optimal Design

doi:10.1109/ICMMT52847.2021.9618325

	Broadband Heterojunction AlGaAs/GaAs PIN Diode Switch Optimal Design
	Zeyu Wang1,2 ; Yiqiang Gao 1; Hao Sun 1; Xiaowei Sun 1
	2021-05
会议录名称	2021 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT)
发表状态	已发表
DOI	10.1109/ICMMT52847.2021.9618325
摘要	A broadband single pole four throw (SP4T) switch was designed, fabricated and fully evaluated in this paper. The switch is based on heterojunction AlGaAs/GaAs PIN diode, owing to its better performance in high frequency than homojunction device. Several vertical epitaxy structure PIN diodes were fabricated, measured and analyzed for switch branch designing. Based on serial-shunt diode unit, a monolithic microwave integrated circuit(MMIC) was fabricated which demonstrates superior broadband performance, measured results show that working from 50 MHz to 40 GHz, the 1.7 mm × 1.5 mm chip can achieve insertion loss in 1.2 dB, isolation more than 30 dB as well as excellent impedance match of all ports. Measured Input 1 dB compression point (IP1dB) is higher than 20 dBm. Fast switching speed is proved via an evaluated PCB, and the measured switching time is within 20 ns.
关键词	Microwave measurement Performance evaluation Semiconductor device measurement PIN photodiodes Switches Heterojunctions Microwave circuits
会议地点	Nanjing, China
会议日期	23-26 May 2021
URL	查看原文
来源库	IEEE
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/354957
专题	物质科学与技术学院_博士生信息科学与技术学院_硕士生
作者单位	1.Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai, China 2.上海科技大学
第一作者单位	上海科技大学
推荐引用方式 GB/T 7714	Zeyu Wang,Yiqiang Gao,Hao Sun,et al. Broadband Heterojunction AlGaAs/GaAs PIN Diode Switch Optimal Design[C],2021.