Controllable step-flow growth of GaN on patterned freestanding substrate

doi:10.1088/1674-4926/45/2/022501

	Controllable step-flow growth of GaN on patterned freestanding substrate
	Peng Wu,1,2,3,4 ; Jianping Liu 1; Lei Hu 1; Xiaoyu Ren,1; Aiqin Tian 1; Wei Zhou 1; Fan Zhang,1,2 ; Xuan Li 1; Masao Ikeda 1; Hui Yang1,2
	2024-02-10
发表期刊	JOURNAL OF SEMICONDUCTORS (IF:4.8[JCR-2023],3.3[5-Year])
ISSN	1674-4926
卷号	45 期号:2
发表状态	已发表
DOI	10.1088/1674-4926/45/2/022501
摘要	A new kind of step-flow growth mode is proposed, which adopts sidewall as step source on patterned GaN substrate. The terrace width of steps originated from the sidewall was found to change with the growth temperature and ammonia flux. The growth mechanism is explained and simulated based on step motion model. This work helps better understand the behaviors of step advancement and puts forward a method of precisely modulating atomic steps. © 2024 Chinese Institute of Electronics.
关键词	Ammonia Gallium nitride Substrates Atomic step GaN substrate Growth mechanisms Growth modes Growth of GaN Motion models Step motions Step-flow growth Terrace width
收录类别	EI
语种	英语
出版者	Institute of Physics
EI入藏号	20240715565208
EI主题词	III-V semiconductors
EI分类号	712.1 Semiconducting Materials ; 804.2 Inorganic Compounds
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/349966
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_杨辉组物质科学与技术学院_博士生
通讯作者	Jianping Liu; Hui Yang
作者单位	1.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou; 215123, China; 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 3.Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201210, China; 4.University of Chinese Academy of Sciences, Beijing; 100049, China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Peng Wu,,Jianping Liu,Lei Hu,et al. Controllable step-flow growth of GaN on patterned freestanding substrate[J]. JOURNAL OF SEMICONDUCTORS,2024,45(2).
APA	Peng Wu,.,Jianping Liu.,Lei Hu.,Xiaoyu Ren,.,Aiqin Tian.,...&Hui Yang.(2024).Controllable step-flow growth of GaN on patterned freestanding substrate.JOURNAL OF SEMICONDUCTORS,45(2).
MLA	Peng Wu,,et al."Controllable step-flow growth of GaN on patterned freestanding substrate".JOURNAL OF SEMICONDUCTORS 45.2(2024).