ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2nTe4+3n family

doi:10.1093/nsr/nwad313

	ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2nTe4+3n family
	Xu, Runzhe 1; Xu, Lixuan 1,2; Liu, Zhongkai2,3 ; Yang, Lexian 1,4,5; Chen, Yulin2,3,6
	2024-02-01
发表期刊	NATIONAL SCIENCE REVIEW (IF:16.3[JCR-2023],18.6[5-Year])
ISSN	2095-5138
EISSN	2053-714X
卷号	11 期号:2
DOI	10.1093/nsr/nwad313
摘要	In the past 5 years, there has been significant research interest in the intrinsic magnetic topological insulator family compounds MnBi2+2nTe4+3n (where n = 0, 1, 2 ...). In particular, exfoliated thin films of MnBi2Te4 have led to numerous experimental breakthroughs, such as the quantum anomalous Hall effect, axion insulator phase and high-Chern number quantum Hall effect without Landau levels. However, despite extensive efforts, the energy gap of the topological surface states due to exchange magnetic coupling, which is a key feature of the characteristic band structure of the system, remains experimentally elusive. The electronic structure measured by using angle-resolved photoemission (ARPES) shows significant deviation from ab initio prediction and scanning tunneling spectroscopy measurements, making it challenging to understand the transport results based on the electronic structure. This paper reviews the measurements of the band structure of MnBi2+2nTe4+3n magnetic topological insulators using ARPES, focusing on the evolution of their electronic structures with temperature, surface and bulk doping and film thickness. The aim of the review is to construct a unified picture of the electronic structure of MnBi2+2nTe4+3n compounds and explore possible control of their topological properties. © 2024 The Author(s). Published by Oxford University Press on behalf of China Science Publishing & Media Ltd.
关键词	Bismuth compounds Electric insulators Manganese compounds Numerical methods Photoelectron spectroscopy Quantum Hall effect Quantum theory Scanning tunneling microscopy Semiconductor doping Tellurium compounds Topological insulators Topology Angle resolved photoemission spectroscopy Angle-resolved photoemission Anomalous hall effects Chern numbers Electronic.structure Insulator phasis Magnetic topological insulator Research interests Thin-films Topological insulators
URL	查看原文
收录类别	EI
语种	英语
出版者	Oxford University Press
EI入藏号	20240715534735
EI主题词	Electronic structure
EI分类号	712.1 Semiconducting Materials ; 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 921.6 Numerical Methods ; 931 Classical Physics ; Quantum Theory ; Relativity ; 931.4 Quantum Theory ; Quantum Mechanics
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/349729
专题	物质科学与技术学院物质科学与技术学院_PI研究组_柳仲楷组物质科学与技术学院_特聘教授组_陈宇林
通讯作者	Liu, Zhongkai; Yang, Lexian; Chen, Yulin
作者单位	1.State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing; 100084, China 2.School of Physical Science and Technology, ShanghaiTech University, CAS-Shanghai Science Research Center, Shanghai; 201210, China 3.ShanghaiTech Laboratory for Topological Physics, Shanghai; 200031, China 4.Frontier Science Center for Quantum Information, Beijing; 100084, China 5.Collaborative Innovation Center of Quantum Matter, Beijing; 100871, China 6.Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford; OX1 3PU, United Kingdom
通讯作者单位	物质科学与技术学院; 上海科技大学
推荐引用方式 GB/T 7714	Xu, Runzhe,Xu, Lixuan,Liu, Zhongkai,et al. ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2nTe4+3n family[J]. NATIONAL SCIENCE REVIEW,2024,11(2).
APA	Xu, Runzhe,Xu, Lixuan,Liu, Zhongkai,Yang, Lexian,&Chen, Yulin.(2024).ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2nTe4+3n family.NATIONAL SCIENCE REVIEW,11(2).
MLA	Xu, Runzhe,et al."ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi2+2nTe4+3n family".NATIONAL SCIENCE REVIEW 11.2(2024).