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Observation of Mott instability at the valence transition of f-electron system | |
Yang, Haifeng1 ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() | |
2023-06-01 | |
发表期刊 | NATIONAL SCIENCE REVIEW (IF:16.3[JCR-2023],18.6[5-Year]) |
ISSN | 2095-5138 |
EISSN | 2053-714X |
卷号 | 10期号:6 |
DOI | 10.1093/nsr/nwad035 |
摘要 | Mott physics plays a critical role in materials with strong electronic correlations. Mott insulator-to-metal transition can be driven by chemical doping, external pressure, temperature and gate voltage, which is often seen in transition metal oxides with 3d electrons near the Fermi energy (e.g. cuprate superconductor). In 4f-electron systems, however, the insulator-to-metal transition is mostly driven by Kondo hybridization and the Mott physics has rarely been explored in experiments. Here, by combining the angle-resolved photoemission spectroscopy and strongly correlated band structure calculations, we show that an unusual Mott instability exists in YbInCu4 accompanying its mysterious first-order valence transition. This contrasts with the prevalent Kondo picture and demonstrates that YbInCu4 is a unique platform to explore the Mott physics in Kondo lattice systems. Our work provides important insight for the understanding and manipulation of correlated quantum phenomena in the f-electron system. © 2023 The Author(s). Published by Oxford University Press on behalf of China Science Publishing & Media Ltd. |
关键词 | Copper alloys Copper compounds Electrons High temperature superconductors Metal insulator transition Mott insulators Photoelectron spectroscopy Ternary alloys Transition metal oxides ARPES DMFT Electron systems Heavy-fermion Kondo coupling Mott transitions Orbital-selective mott transition Orbitals Strong correlation Valence transitions |
URL | 查看原文 |
收录类别 | EI |
语种 | 英语 |
出版者 | Oxford University Press |
EI入藏号 | 20233314538873 |
EI主题词 | Transition metals |
EI分类号 | 413.1 Electric Insulating Materials ; 531 Metallurgy and Metallography ; 544.2 Copper Alloys ; 708.3.1 High Temperature Superconducting Materials ; 714 Electronic Components and Tubes |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/348664 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_柳仲楷组 物质科学与技术学院_特聘教授组_陈宇林 物质科学与技术学院_博士生 物质科学与技术学院_公共科研平台_拓扑物理实验室 大科学中心_公共科研平台_大科学装置建设部 |
通讯作者 | Yang, Yi-Feng; Liu, Zhongkai; Chen, Yulin |
作者单位 | 1.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China 2.Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei; 230031, China 3.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing; 100190, China 4.ShanghaiTech Laboratory for Topological Physics, Shanghai; 201210, China 5.State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing; 100084, China 6.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai; 200050, China 7.Department of Physics, University of Oxford, Oxford; OX1 3PU, United Kingdom 8.Science Island Branch of Graduate School, University of Science, Technology of China, Hefei; 230026, China 9.High Magnetic Field Laboratory, Chinese, Academy of Sciences, Hefei; 230031, China 10.Collaborative Innovation, Center of Microstructures, Nanjing University, Nanjing; 210093, China 11.University of Chinese, Academy of Sciences, Beijing; 100049, China 12.Songshan Lake Materials Laboratory, Dongguan; 523808, China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院; 上海科技大学 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Yang, Haifeng,Gao, Jingjing,Cao, Yingying,et al. Observation of Mott instability at the valence transition of f-electron system[J]. NATIONAL SCIENCE REVIEW,2023,10(6). |
APA | Yang, Haifeng.,Gao, Jingjing.,Cao, Yingying.,Xu, Yuanji.,Liang, Aiji.,...&Chen, Yulin.(2023).Observation of Mott instability at the valence transition of f-electron system.NATIONAL SCIENCE REVIEW,10(6). |
MLA | Yang, Haifeng,et al."Observation of Mott instability at the valence transition of f-electron system".NATIONAL SCIENCE REVIEW 10.6(2023). |
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