ShanghaiTech University Knowledge Management System
| Reflection sensitivity of dual-state quantum dot lasers | |
| 2023-10 | |
| 发表期刊 | PHOTONICS RESEARCH (IF:6.6[JCR-2023],6.6[5-Year]) |
| ISSN | 2327-9125 |
| 卷号 | 11期号:10页码:1713-1722 |
| DOI | 10.1364/PRJ.494393 |
| 摘要 | This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers, showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold. This sensitivity can be degraded by increasing the excited-to-ground-state energy separation, which results in a high excited-to-ground-state threshold ratio. In addition, the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor, which leads to a low critical feedback level. These findings illuminate a path to fabricate reflection-insensitive quantum dot lasers for isolator-free photonic integrated circuits. © 2023 Chinese Laser Press. |
| 关键词 | Excited states Ground state Nanocrystals Semiconductor quantum dots Damping factors Energy separations Excited-states External optical feedback Ground-state energies High sensitivity Lasing threshold Lasings Linewidth enhancement factor Quantum-dot lasers |
| URL | 查看原文 |
| 收录类别 | EI |
| 语种 | 英语 |
| 出版者 | Optica Publishing Group (formerly OSA) |
| EI入藏号 | 20234214920938 |
| EI主题词 | Quantum dot lasers |
| EI分类号 | 714.2 Semiconductor Devices and Integrated Circuits ; 744.4.1 Semiconductor Lasers ; 761 Nanotechnology ; 931.3 Atomic and Molecular Physics ; 931.4 Quantum Theory ; Quantum Mechanics ; 933.1 Crystalline Solids |
| 原始文献类型 | Journal article (JA) |
| 引用统计 | 正在获取...
|
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/348660 |
| 专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_王成组 |
| 通讯作者 | Duan, Jianan |
| 作者单位 | 1.State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen; 518055, China 2.LTCI, Telecom Paris, Institut Polytechnique de Paris, Palaiseau; 91120, France 3.DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Lyngby; 2800, Denmark 4.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China 5.Center for High Technology Materials, The University of New-Mexico, Albuquerque; NM; 87106, United States |
| 推荐引用方式 GB/T 7714 | Jin, Zhiyong,Huang, Heming,Zhou, Yueguang,et al. Reflection sensitivity of dual-state quantum dot lasers[J]. PHOTONICS RESEARCH,2023,11(10):1713-1722. |
| APA | Jin, Zhiyong.,Huang, Heming.,Zhou, Yueguang.,Zhao, Shiyuan.,Ding, Shihao.,...&Duan, Jianan.(2023).Reflection sensitivity of dual-state quantum dot lasers.PHOTONICS RESEARCH,11(10),1713-1722. |
| MLA | Jin, Zhiyong,et al."Reflection sensitivity of dual-state quantum dot lasers".PHOTONICS RESEARCH 11.10(2023):1713-1722. |
| 条目包含的文件 | 下载所有文件 | |||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
修改评论
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。