ShanghaiTech University Knowledge Management System
| Reflection sensitivity of dual-state quantum dot lasers | |
| 2023-10 | |
| Source Publication | PHOTONICS RESEARCH
 |
| ISSN | 2327-9125 |
| Volume | 11Issue:10Pages:1713-1722 |
| DOI | 10.1364/PRJ.494393 |
| Abstract | This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers, showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold. This sensitivity can be degraded by increasing the excited-to-ground-state energy separation, which results in a high excited-to-ground-state threshold ratio. In addition, the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor, which leads to a low critical feedback level. These findings illuminate a path to fabricate reflection-insensitive quantum dot lasers for isolator-free photonic integrated circuits. © 2023 Chinese Laser Press. |
| Keyword | Excited states Ground state Nanocrystals Semiconductor quantum dots Damping factors Energy separations Excited-states External optical feedback Ground-state energies High sensitivity Lasing threshold Lasings Linewidth enhancement factor Quantum-dot lasers |
| URL | 查看原文 |
| Indexed By | EI |
| Language | 英语 |
| Publisher | Optica Publishing Group (formerly OSA) |
| EI Accession Number | 20234214920938 |
| EI Keywords | Quantum dot lasers |
| EI Classification Number | 714.2 Semiconductor Devices and Integrated Circuits ; 744.4.1 Semiconductor Lasers ; 761 Nanotechnology ; 931.3 Atomic and Molecular Physics ; 931.4 Quantum Theory ; Quantum Mechanics ; 933.1 Crystalline Solids |
| Original Document Type | Journal article (JA) |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/348660 |
| Collection | 信息科学与技术学院 信息科学与技术学院_PI研究组_王成组 |
| Corresponding Author | Duan, Jianan |
| Affiliation | 1.State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen; 518055, China 2.LTCI, Telecom Paris, Institut Polytechnique de Paris, Palaiseau; 91120, France 3.DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Lyngby; 2800, Denmark 4.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China 5.Center for High Technology Materials, The University of New-Mexico, Albuquerque; NM; 87106, United States |
| Recommended Citation GB/T 7714 | Jin, Zhiyong,Huang, Heming,Zhou, Yueguang,et al. Reflection sensitivity of dual-state quantum dot lasers[J]. PHOTONICS RESEARCH,2023,11(10):1713-1722. |
| APA | Jin, Zhiyong.,Huang, Heming.,Zhou, Yueguang.,Zhao, Shiyuan.,Ding, Shihao.,...&Duan, Jianan.(2023).Reflection sensitivity of dual-state quantum dot lasers.PHOTONICS RESEARCH,11(10),1713-1722. |
| MLA | Jin, Zhiyong,et al."Reflection sensitivity of dual-state quantum dot lasers".PHOTONICS RESEARCH 11.10(2023):1713-1722. |
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