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| Charge order induced Dirac pockets in the nonsymmorphic crystal TaTe4 | |
| 2023-10-13 | |
| 发表期刊 | PHYSICAL REVIEW B
 |
| ISSN | 2469-9950 |
| EISSN | 2469-9969 |
| 卷号 | 108期号:15 |
| 发表状态 | 已发表 |
| DOI | 10.1103/PhysRevB.108.155121 |
| 摘要 | The interplay between charge order (CO) and nontrivial band topology has spurred tremendous interest in understanding topological excitations beyond the single-particle description. In a quasi-one-dimensional nonsymmorphic crystal TaTe4, the (2ax2bx3c) charge ordered ground state drives the system into a space group where the symmetry indicators feature the emergence of Dirac fermions and unconventional double Dirac fermions. Using angle-resolved photoemission spectroscopy and first-principles calculations, we provide evidence of the CO induced Dirac fermion-related bands near the Fermi level. Furthermore, the band folding at the Fermi level is compatible with the new periodicity dictated by the CO, indicating that the electrons near the Fermi level follow the crystalline symmetries needed to host double Dirac fermions in this system. |
| 关键词 | Crystal symmetry Crystals Fermi level Photoelectron spectroscopy Topology Angle resolved photoemission spectroscopy Charge-ordering Dirac fermions First principle calculations Foldings Quasi-one dimensional Quasi-one-dimensional Single-particle Space Groups Topological excitations |
| URL | 查看原文 |
| 收录类别 | SCI ; EI |
| 语种 | 英语 |
| 资助项目 | U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Division of Material Sciences and Engineering[M-0006] ; null[DE-AC02-76SF00515] |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS记录号 | WOS:001087458500002 |
| 出版者 | AMER PHYSICAL SOC |
| EI入藏号 | 20242016085540 |
| EI主题词 | Ground state |
| EI分类号 | 921.4 Combinatorial Mathematics, Includes Graph Theory, Set Theory ; 931.3 Atomic and Molecular Physics ; 933.1 Crystalline Solids ; 933.1.1 Crystal Lattice |
| 原始文献类型 | Journal article (JA) |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/345900 |
| 专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_李刚组 物质科学与技术学院_博士生 |
| 通讯作者 | Lv, Bing |
| 作者单位 | 1.Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA 2.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 3.Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA 4.Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA 5.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA 6.SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA 7.Rice Univ, Dept Elect & Comp Engn, Houston, TX 77005 USA 8.Lawrence Berkeley Natl Lab, Mat Sci Div, Berkeley, CA 94720 USA |
| 推荐引用方式 GB/T 7714 | Zhang, Yichen,Zhou, Ruixiang,Wu, Hanlin,et al. Charge order induced Dirac pockets in the nonsymmorphic crystal TaTe4[J]. PHYSICAL REVIEW B,2023,108(15). |
| APA | Zhang, Yichen.,Zhou, Ruixiang.,Wu, Hanlin.,Oh, Ji Seop.,Li, Sheng.,...&Yi, Ming.(2023).Charge order induced Dirac pockets in the nonsymmorphic crystal TaTe4.PHYSICAL REVIEW B,108(15). |
| MLA | Zhang, Yichen,et al."Charge order induced Dirac pockets in the nonsymmorphic crystal TaTe4".PHYSICAL REVIEW B 108.15(2023). |
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