Defect Emission and Its Dipole Orientation in Layered Ternary Znln<sub>2</sub>S<sub>4</sub> Semiconductor

doi:10.1002/smll.202305658

	Defect Emission and Its Dipole Orientation in Layered Ternary Znln₂S₄ Semiconductor
	Wang, Rui 1; Liu, Quan 2; Dai, Sheng3 ; Liu, Chao-Ming 1,4; Liu, Yue 1; Sun, Zhao-Yuan 1; Li, Hui 5; Zhang, Chang-Jin 6; Wang, Han3 ; Xu, Cheng-Yan 7; Shao, Wen-Zhu 1; Meixner, Alfred J.2; Zhang, Dai 2; Li, Yang 1,8; Zhen, Liang 1,8
	2023-10-01
发表期刊	SMALL
ISSN	1613-6810
EISSN	1613-6829
卷号	20 期号:7
发表状态	已发表
DOI	10.1002/smll.202305658
摘要	Defect engineering is promising to tailor the physical properties of 2D semiconductors for function-oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors are not clarified. Here, the effect of defects on the electronic structure and optical properties of few-layer hexagonal Znln(2)S(4) is thoroughly studied via versatile spectroscopic tools in combination with theoretical calculations. It is demonstrated that the Zn-In antistructural defects induce the formation of a series of donor and acceptor energy levels and sulfur vacancies induce donor energy levels, leading to rich recombination paths for defect emission and extrinsic absorption. Impressively, the emission of donor-acceptor pair in Znln(2)S(4 )can be significantly tailored by electrostatic gating due to efficient tunability of Fermi level (E-f). Furthermore, the layer-dependent dipole orientation of defect emission in Znln(2)S(4) is directly revealed by back focal plane imagining, where it presents obviously in-plane dipole orientation within a dozen-layer thickness of Znln(2)S(4). These unique features of defects in Znln(2)S(4) including extrinsic absorption, rich recombination paths, gate tunability, and in-plane dipole orientation are definitely a benefit to the advanced orientation-functional optoelectronic applications.
关键词	back focal plane imaging defect dipole orientation photoluminescence Znln(2)S(4)
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	National Key Research and Development Program of China[2019YFA0705201] ; National Natural Science Foundation of China["52272146","51902069"] ; German Research Foundation["ZH 279/13-1","ME 1600/21-1"]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:001080994400001
出版者	WILEY-V C H VERLAG GMBH
EI入藏号	20234114858764
EI主题词	Optical properties
EI分类号	531 Metallurgy and Metallography ; 741.1 Light/Optics ; 933.1 Crystalline Solids ; 951 Materials Science
原始文献类型	Article in Press
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/343602
专题	物质科学与技术学院_硕士生大科学中心_PI研究组_王涵组
通讯作者	Wang, Han; Shao, Wen-Zhu; Zhang, Dai; Li, Yang
作者单位	1.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China 2.Eberhard Karls Univ Tubingen, Inst Phys & Theoret Chem, D-72076 Tubingen, Germany 3.ShanghaiTech Univ, Ctr Transformat Sci, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Harbin Inst Technol, Lab Space Environm & Phys Sci, Harbin 150001, Peoples R China 5.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Peoples R China 6.Chinese Acad Sci, Hefei Inst Phys Sci, High Magnet Field Lab Anhui Prov, Hefei 230031, Peoples R China 7.Harbin Inst Technol Shenzhen, Sch Mat Sci & Engn, Sauvage Lab Smart Mat, Shenzhen 518055, Peoples R China 8.Harbin Inst Technol, Key Lab Microsyst & Microstruct Mfg, MOE, Harbin 150080, Peoples R China
通讯作者单位	上海科技大学
推荐引用方式 GB/T 7714	Wang, Rui,Liu, Quan,Dai, Sheng,et al. Defect Emission and Its Dipole Orientation in Layered Ternary Znln₂S₄ Semiconductor[J]. SMALL,2023,20(7).
APA	Wang, Rui.,Liu, Quan.,Dai, Sheng.,Liu, Chao-Ming.,Liu, Yue.,...&Zhen, Liang.(2023).Defect Emission and Its Dipole Orientation in Layered Ternary Znln₂S₄ Semiconductor.SMALL,20(7).
MLA	Wang, Rui,et al."Defect Emission and Its Dipole Orientation in Layered Ternary Znln₂S₄ Semiconductor".SMALL 20.7(2023).