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Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector | |
2019-05 | |
发表期刊 | APPLIED PHYSICS EXPRESS |
ISSN | 1882-0778 |
卷号 | 12期号:5 |
发表状态 | 已发表 |
DOI | 10.7567/1882-0786/ab14fc |
摘要 | We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W-1 and noise equivalent power (NEP) of 0.38 pW Hz -(1/2) at 20-40 GHz, and achieved a responsivity of 3.3 kV W-1 and NEP of 5.7 pW Hz(-1/2) at 0.165-0.173 THz; moreover, a short response time similar to 810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays. (C) 2019 The Japan Society of Applied Physics |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | Technological Innovation Action Program of Shanghai[16JC1403400] |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:000464739800002 |
出版者 | IOP PUBLISHING LTD |
EI入藏号 | 20192006937429 |
EI主题词 | Silicon on insulator technology |
EI分类号 | Electromagnetic Waves:711 ; Semiconductor Devices and Integrated Circuits:714.2 |
WOS关键词 | WAVE ; RADIATION ; TECHNOLOGY |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/34329 |
专题 | 物质科学与技术学院_硕士生 物质科学与技术学院_特聘教授组_褚君浩组 |
通讯作者 | Huang, Zhiming |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Space Act Optoelect Technol, 500 Yu Tian Rd, Shanghai 200083, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Wu, Caiyang,Zhou, Wei,Yao, Niangjuan,et al. Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector[J]. APPLIED PHYSICS EXPRESS,2019,12(5). |
APA | Wu, Caiyang.,Zhou, Wei.,Yao, Niangjuan.,Xu, Xinyue.,Qu, Yue.,...&Chu, Junhao.(2019).Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector.APPLIED PHYSICS EXPRESS,12(5). |
MLA | Wu, Caiyang,et al."Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector".APPLIED PHYSICS EXPRESS 12.5(2019). |
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