Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector

doi:10.7567/1882-0786/ab14fc

	Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector
	Wu, Caiyang1,2,3 ; Zhou, Wei 1; Yao, Niangjuan 1; Xu, Xinyue 1; Qu, Yue 1,2; Zhang, Zhibo 1; Wu, Jing 1; Jiang, Lin 1; Huang, Zhiming 1,4; Chu, Junhao1,3
	2019-05
发表期刊	APPLIED PHYSICS EXPRESS (IF:2.3[JCR-2023],2.3[5-Year])
ISSN	1882-0778
卷号	12 期号:5
发表状态	已发表
DOI	10.7567/1882-0786/ab14fc
摘要	We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W-1 and noise equivalent power (NEP) of 0.38 pW Hz -(1/2) at 20-40 GHz, and achieved a responsivity of 3.3 kV W-1 and NEP of 5.7 pW Hz(-1/2) at 0.165-0.173 THz; moreover, a short response time similar to 810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays. (C) 2019 The Japan Society of Applied Physics
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Technological Innovation Action Program of Shanghai[16JC1403400]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000464739800002
出版者	IOP PUBLISHING LTD
EI入藏号	20192006937429
EI主题词	Silicon on insulator technology
EI分类号	Electromagnetic Waves:711 ; Semiconductor Devices and Integrated Circuits:714.2
WOS关键词	WAVE ; RADIATION ; TECHNOLOGY
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/34329
专题	物质科学与技术学院_硕士生物质科学与技术学院_特聘教授组_褚君浩组
通讯作者	Huang, Zhiming
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Space Act Optoelect Technol, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Wu, Caiyang,Zhou, Wei,Yao, Niangjuan,et al. Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector[J]. APPLIED PHYSICS EXPRESS,2019,12(5).
APA	Wu, Caiyang.,Zhou, Wei.,Yao, Niangjuan.,Xu, Xinyue.,Qu, Yue.,...&Chu, Junhao.(2019).Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector.APPLIED PHYSICS EXPRESS,12(5).
MLA	Wu, Caiyang,et al."Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector".APPLIED PHYSICS EXPRESS 12.5(2019).