Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector
2019-05
Source PublicationAPPLIED PHYSICS EXPRESS
ISSN1882-0778
Volume12Issue:5
Status已发表
DOI10.7567/1882-0786/ab14fc
AbstractWe demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W-1 and noise equivalent power (NEP) of 0.38 pW Hz -(1/2) at 20-40 GHz, and achieved a responsivity of 3.3 kV W-1 and NEP of 5.7 pW Hz(-1/2) at 0.165-0.173 THz; moreover, a short response time similar to 810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays. (C) 2019 The Japan Society of Applied Physics
Indexed BySCI ; SCIE ; EI
Language英语
Funding ProjectTechnological Innovation Action Program of Shanghai[16JC1403400]
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000464739800002
PublisherIOP PUBLISHING LTD
EI Accession Number20192006937429
EI KeywordsSilicon on insulator technology
EI Classification NumberElectromagnetic Waves:711 ; Semiconductor Devices and Integrated Circuits:714.2
WOS KeywordWAVE ; RADIATION ; TECHNOLOGY
Original Document TypeArticle
Citation statistics
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/34329
Collection物质科学与技术学院_硕士生
物质科学与技术学院_特聘教授组_褚君浩组
Corresponding AuthorHuang, Zhiming
Affiliation
1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China
4.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Space Act Optoelect Technol, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
First Author AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Wu, Caiyang,Zhou, Wei,Yao, Niangjuan,et al. Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector[J]. APPLIED PHYSICS EXPRESS,2019,12(5).
APA Wu, Caiyang.,Zhou, Wei.,Yao, Niangjuan.,Xu, Xinyue.,Qu, Yue.,...&Chu, Junhao.(2019).Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector.APPLIED PHYSICS EXPRESS,12(5).
MLA Wu, Caiyang,et al."Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector".APPLIED PHYSICS EXPRESS 12.5(2019).
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