Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector
Wu, Caiyang1,2,3; Zhou, Wei1; Yao, Niangjuan1; Xu, Xinyue1; Qu, Yue1,2; Zhang, Zhibo1; Wu, Jing1; Jiang, Lin1; Huang, Zhiming1,4; Chu, Junhao1,3
2019-05
发表期刊APPLIED PHYSICS EXPRESS
ISSN1882-0778
卷号12期号:5
发表状态已发表
DOI10.7567/1882-0786/ab14fc
摘要We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W-1 and noise equivalent power (NEP) of 0.38 pW Hz -(1/2) at 20-40 GHz, and achieved a responsivity of 3.3 kV W-1 and NEP of 5.7 pW Hz(-1/2) at 0.165-0.173 THz; moreover, a short response time similar to 810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays. (C) 2019 The Japan Society of Applied Physics
收录类别SCI ; SCIE ; EI
语种英语
资助项目Technological Innovation Action Program of Shanghai[16JC1403400]
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:000464739800002
出版者IOP PUBLISHING LTD
EI入藏号20192006937429
EI主题词Silicon on insulator technology
EI分类号Electromagnetic Waves:711 ; Semiconductor Devices and Integrated Circuits:714.2
WOS关键词WAVE ; RADIATION ; TECHNOLOGY
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/34329
专题物质科学与技术学院_硕士生
物质科学与技术学院_特聘教授组_褚君浩组
通讯作者Huang, Zhiming
作者单位1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China
4.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Space Act Optoelect Technol, 500 Yu Tian Rd, Shanghai 200083, Peoples R China
第一作者单位物质科学与技术学院
推荐引用方式
GB/T 7714
Wu, Caiyang,Zhou, Wei,Yao, Niangjuan,et al. Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector[J]. APPLIED PHYSICS EXPRESS,2019,12(5).
APA Wu, Caiyang.,Zhou, Wei.,Yao, Niangjuan.,Xu, Xinyue.,Qu, Yue.,...&Chu, Junhao.(2019).Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector.APPLIED PHYSICS EXPRESS,12(5).
MLA Wu, Caiyang,et al."Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector".APPLIED PHYSICS EXPRESS 12.5(2019).
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