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| Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector | |
| 2019-05 | |
| Source Publication | APPLIED PHYSICS EXPRESS
 |
| ISSN | 1882-0778 |
| Volume | 12Issue:5 |
| Status | 已发表 |
| DOI | 10.7567/1882-0786/ab14fc |
| Abstract | We demonstrated a Si-based photoelectric detector with silicon-on-insulator structure. The Si-based detector was successfully fabricated and showed broadband response from 20-40 GHz to 0.165-0.173 THz radiation at room temperature. It achieved a maximal responsivity of 49.3 kV W-1 and noise equivalent power (NEP) of 0.38 pW Hz -(1/2) at 20-40 GHz, and achieved a responsivity of 3.3 kV W-1 and NEP of 5.7 pW Hz(-1/2) at 0.165-0.173 THz; moreover, a short response time similar to 810 ns was realized for the detector. The simple structure, excellent performance and easy integration of the detectors, which provides an avenue to the optoelectronic integration of sensitive room-temperature terahertz focal-plane arrays. (C) 2019 The Japan Society of Applied Physics |
| Indexed By | SCI ; SCIE ; EI |
| Language | 英语 |
| Funding Project | Technological Innovation Action Program of Shanghai[16JC1403400] |
| WOS Research Area | Physics |
| WOS Subject | Physics, Applied |
| WOS ID | WOS:000464739800002 |
| Publisher | IOP PUBLISHING LTD |
| EI Accession Number | 20192006937429 |
| EI Keywords | Silicon on insulator technology |
| EI Classification Number | Electromagnetic Waves:711 ; Semiconductor Devices and Integrated Circuits:714.2 |
| WOS Keyword | WAVE ; RADIATION ; TECHNOLOGY |
| Original Document Type | Article |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/34329 |
| Collection | 物质科学与技术学院_硕士生 物质科学与技术学院_特聘教授组_褚君浩组 |
| Corresponding Author | Huang, Zhiming |
| Affiliation | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Space Act Optoelect Technol, 500 Yu Tian Rd, Shanghai 200083, Peoples R China |
| First Author Affilication | School of Physical Science and Technology |
| Recommended Citation GB/T 7714 | Wu, Caiyang,Zhou, Wei,Yao, Niangjuan,et al. Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector[J]. APPLIED PHYSICS EXPRESS,2019,12(5). |
| APA | Wu, Caiyang.,Zhou, Wei.,Yao, Niangjuan.,Xu, Xinyue.,Qu, Yue.,...&Chu, Junhao.(2019).Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector.APPLIED PHYSICS EXPRESS,12(5). |
| MLA | Wu, Caiyang,et al."Silicon-based high sensitivity of room-temperature microwave and sub-terahertz detector".APPLIED PHYSICS EXPRESS 12.5(2019). |
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