Thermoelectric properties of n-type Cu4Sn7S16-based compounds

doi:10.1039/c9ra00077a

	Thermoelectric properties of n-type Cu4Sn7S16-based compounds
	Deng, Tingting1,2,3 ; Wei, Tian-Ran 1; Song, Qingfeng 1,2; Xu, Qing1,2,3 ; Ren, Dudi 1; Qiu, Pengfei 1; Shi, Xun 1; Chen, Lidong 1
	2019
发表期刊	RSC ADVANCES (IF:3.9[JCR-2023],3.9[5-Year])
ISSN	2046-2069
卷号	9 期号:14 页码:7826-7832
发表状态	已发表
DOI	10.1039/c9ra00077a
摘要	Copper-based chalcogenides have ultralow thermal conductivity and ultrahigh thermoelectric performance, but most of them are p-type semiconductors. It is urgent to develop n-type counterparts for high efficiency thermoelectric modules based on these copper based-chalcogenides. Cu4Sn7S16 is an intrinsically n-type semiconductor with complex crystal structure and low thermal conductivity. However, its thermoelectric properties have not been well studied when compared to the well-known n-type CuFeS2. In this work, high-quality Cu4Sn7S16-based compounds are fabricated and their thermoelectric properties are systematically studied. Using Ag and Sb as dopants, the carrier concentration is tuned over a wide range. The electrical transport properties can be well described by the single parabolic band model with carrier acoustic phonons scattering. It is revealed that Cu4Sn7S16 exhibits a low effective mass and relatively high mobility. The thermal conductivity is lower than 0.8W m(-1) K-1 from 300 to 700 K and shows a weak dependence on temperature. A maximum zT of 0.27 is obtained in Cu3.97Ag0.03Sn7S16 at 700 K. Further enhancement of thermoelectric performance is possible when a more efficient n-type dopant is used.
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	Shanghai Government[16520721400]
WOS研究方向	Chemistry
WOS类目	Chemistry, Multidisciplinary
WOS记录号	WOS:000462646000031
出版者	ROYAL SOC CHEMISTRY
EI入藏号	20191206653616
EI主题词	Carrier concentration ; Chalcogenides ; Copper ; Copper compounds ; Crystal structure ; Semiconducting tin compounds ; Silver compounds ; Thermal conductivity ; Thermoelectric equipment ; Thermoelectricity ; Tin compounds
EI分类号	Copper:544.1 ; Thermoelectric Energy:615.4 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Compound Semiconducting Materials:712.1.2 ; Inorganic Compounds:804.2 ; Crystal Lattice:933.1.1
WOS关键词	LOW THERMAL-CONDUCTIVITY ; CRYSTAL-STRUCTURE ; EARTH-ABUNDANT ; BAND-GAP ; PERFORMANCE ; ENERGY
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/34190
专题	物质科学与技术学院_博士生
通讯作者	Wei, Tian-Ran; Shi, Xun
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Deng, Tingting,Wei, Tian-Ran,Song, Qingfeng,et al. Thermoelectric properties of n-type Cu4Sn7S16-based compounds[J]. RSC ADVANCES,2019,9(14):7826-7832.
APA	Deng, Tingting.,Wei, Tian-Ran.,Song, Qingfeng.,Xu, Qing.,Ren, Dudi.,...&Chen, Lidong.(2019).Thermoelectric properties of n-type Cu4Sn7S16-based compounds.RSC ADVANCES,9(14),7826-7832.
MLA	Deng, Tingting,et al."Thermoelectric properties of n-type Cu4Sn7S16-based compounds".RSC ADVANCES 9.14(2019):7826-7832.