Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate
2018-12
发表期刊红外与毫米波学报 (IF:0.6[JCR-2023],0.5[5-Year])
ISSN1001-9014
卷号37期号:6页码:699-+
发表状态已发表
DOI10.11972/j.issn.1001-9014.2018.06.011
摘要In0.83Ga0.17As layers were grown on InP substrate with InAlAs metamorphic buffers by gas source molecular beam epitaxy. The characteristics of InGaAs and InAlAs layers grown with different temperature schemes were investigated by high resolution X-ray diffraction reciprocal space maps, atomic force microscopy, photoluminescence and Hall-effect measurements. Results show that a higher growth temperature gradient of the InAlAs metamorphic buffers leads to a broader (004) reflection peak. The tilt angle between the epilayer and the substrate increases as well. The surface of the buffer layer becomes rougher. It indicates that the material defects increase and lattice relaxation becomes insufficient. In0.83Ga0.17As layers were grown on the InAlAs metamorphic buffer with a fixed growth temperature gradient. A higher growth temperature leads to a moderate full width at half maximum along the Q(x) direction of the (004) reflection, a stronger photoluminescence at 77 K, but a rougher surface of In0.83Ga0.17As. This indicates that the material defects can be suppressed at higher growth temperatures.
关键词molecular beam epitaxy InGaAs InAlAs metamorphic buffer growth temperature
收录类别SCI ; SCIE ; 北大核心 ; EI ; CSCD
语种英语
资助项目Shanghai Rising -Star Program[17QA1404900]
WOS研究方向Optics
WOS类目Optics
WOS记录号WOS:000455098300011
出版者SCIENCE PRESS
EI入藏号20190506447794
EI主题词Atomic force microscopy ; Gallium compounds ; Gas source molecular beam epitaxy ; Growth temperature ; III-V semiconductors ; Indium ; Indium phosphide ; Molecular beam epitaxy ; Molecular beams ; Photoluminescence ; Semiconducting indium ; Semiconducting indium gallium arsenide ; Semiconducting indium phosphide ; Semiconductor alloys ; Semiconductor quantum wells ; Thermal gradients ; X ray diffraction analysis
EI分类号Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Thermodynamics:641.1 ; Single Element Semiconducting Materials:712.1.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3
WOS关键词DETECTOR
原始文献类型Article
引用统计
正在获取...
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/30104
专题物质科学与技术学院_硕士生
通讯作者Gu Yi
作者单位
1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式
GB/T 7714
Zhang Jian,Chen Xing-You,Gu Yi,et al. Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate[J]. 红外与毫米波学报,2018,37(6):699-+.
APA Zhang Jian.,Chen Xing-You.,Gu Yi.,Gong Qian.,Huang Wei-Guo.,...&Zhang Yong-Gang.(2018).Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate.红外与毫米波学报,37(6),699-+.
MLA Zhang Jian,et al."Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate".红外与毫米波学报 37.6(2018):699-+.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Zhang Jian]的文章
[Chen Xing-You]的文章
[Gu Yi]的文章
百度学术
百度学术中相似的文章
[Zhang Jian]的文章
[Chen Xing-You]的文章
[Gu Yi]的文章
必应学术
必应学术中相似的文章
[Zhang Jian]的文章
[Chen Xing-You]的文章
[Gu Yi]的文章
相关权益政策
暂无数据
收藏/分享
文件名: create_pdf (1).pdf
格式: Adobe PDF
此文件暂不支持浏览
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。