Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate

doi:10.11972/j.issn.1001-9014.2018.06.011

	Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate
	Zhang Jian 1,2; Chen Xing-You 1; Gu Yi 1; Gong Qian 1; Huang Wei-Guo1,3 ; Du Ben 1,2; Huang Hua 1; Ma Ying-Jie 1; Zhang Yong-Gang 1
	2018-12
发表期刊	红外与毫米波学报 (IF:0.6[JCR-2023],0.5[5-Year])
ISSN	1001-9014
卷号	37 期号:6 页码:699-+
发表状态	已发表
DOI	10.11972/j.issn.1001-9014.2018.06.011
摘要	In0.83Ga0.17As layers were grown on InP substrate with InAlAs metamorphic buffers by gas source molecular beam epitaxy. The characteristics of InGaAs and InAlAs layers grown with different temperature schemes were investigated by high resolution X-ray diffraction reciprocal space maps, atomic force microscopy, photoluminescence and Hall-effect measurements. Results show that a higher growth temperature gradient of the InAlAs metamorphic buffers leads to a broader (004) reflection peak. The tilt angle between the epilayer and the substrate increases as well. The surface of the buffer layer becomes rougher. It indicates that the material defects increase and lattice relaxation becomes insufficient. In0.83Ga0.17As layers were grown on the InAlAs metamorphic buffer with a fixed growth temperature gradient. A higher growth temperature leads to a moderate full width at half maximum along the Q(x) direction of the (004) reflection, a stronger photoluminescence at 77 K, but a rougher surface of In0.83Ga0.17As. This indicates that the material defects can be suppressed at higher growth temperatures.
关键词	molecular beam epitaxy InGaAs InAlAs metamorphic buffer growth temperature
收录类别	SCI ; SCIE ; 北大核心 ; EI ; CSCD
语种	英语
资助项目	Shanghai Rising -Star Program[17QA1404900]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000455098300011
出版者	SCIENCE PRESS
EI入藏号	20190506447794
EI主题词	Atomic force microscopy ; Gallium compounds ; Gas source molecular beam epitaxy ; Growth temperature ; III-V semiconductors ; Indium ; Indium phosphide ; Molecular beam epitaxy ; Molecular beams ; Photoluminescence ; Semiconducting indium ; Semiconducting indium gallium arsenide ; Semiconducting indium phosphide ; Semiconductor alloys ; Semiconductor quantum wells ; Thermal gradients ; X ray diffraction analysis
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Thermodynamics:641.1 ; Single Element Semiconducting Materials:712.1.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3
WOS关键词	DETECTOR
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/30104
专题	物质科学与技术学院_硕士生
通讯作者	Gu Yi
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式 GB/T 7714	Zhang Jian,Chen Xing-You,Gu Yi,et al. Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate[J]. 红外与毫米波学报,2018,37(6):699-+.
APA	Zhang Jian.,Chen Xing-You.,Gu Yi.,Gong Qian.,Huang Wei-Guo.,...&Zhang Yong-Gang.(2018).Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate.红外与毫米波学报,37(6),699-+.
MLA	Zhang Jian,et al."Optimization of growth temperatures for InAlAs metamorphic buffers and high indium InGaAs on InP substrate".红外与毫米波学报 37.6(2018):699-+.