Coexistent VO2 (M) and VO2 (B) polymorphous thin films with multiphase-driven insulator-metal transition

doi:10.3390/nano13091514

	Coexistent VO2 (M) and VO2 (B) polymorphous thin films with multiphase-driven insulator-metal transition
	Qiu, Mengxia1,2 ; Yang, Wanli 3; Xu, Peiran 1; Huang, Tiantian 1; Chen, Xin 1,3; Dai, Ning1,2,3
	2023
发表期刊	NANOMATERIALS (IF:4.4[JCR-2023],4.7[5-Year])
ISSN	13091514
EISSN	2079-4991
卷号	13 期号:9
发表状态	已发表
DOI	10.3390/nano13091514
摘要	Reversible insulator-metal transition (IMT) and structure phase change in vanadium dioxide (VO2) remain vital and challenging with complex polymorphs. It is always essential to understand the polymorphs that coexist in desired VO2 materials and their IMT behaviors. Different electrical properties and lattice alignments in VO2 (M) and VO2 (B) phases have enabled the creation of versatile functional devices. Here, we present polymorphous VO2 thin films with coexistent VO2 (M) and VO2 (B) phases and phase-dependent IMT behaviors. The presence of VO2 (B) phases may induce lattice distortions in VO2 (M). The plane spacing of (011)(M) in the VO2 (M) phase becomes widened, and the V-V and V-O vibrations shift when more VO2 (B) phase exists in the VO2 (M) matrix. Significantly, the coexisting VO2 (B) phases promote the IMT temperature of the polymorphous VO2 thin films. We expect that such coexistent polymorphs and IMT variations would help us to understand the microstructures and IMT in the desired VO2 materials and contribute to advanced electronic transistors and optoelectronic devices.
关键词	vanadium dioxide polymorphs monoclinic phase insulator-metal transition
URL	查看原文
收录类别	SCI
语种	英语
资助项目	NSFC["92064014","11933006"] ; National Key R&D Program of China[TD2020002]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000986855100001
出版者	MDPI
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/296022
专题	物质科学与技术学院物质科学与技术学院_特聘教授组_戴宁组物质科学与技术学院_博士生
通讯作者	Chen, Xin; Dai, Ning
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Qiu, Mengxia,Yang, Wanli,Xu, Peiran,et al. Coexistent VO2 (M) and VO2 (B) polymorphous thin films with multiphase-driven insulator-metal transition[J]. NANOMATERIALS,2023,13(9).
APA	Qiu, Mengxia,Yang, Wanli,Xu, Peiran,Huang, Tiantian,Chen, Xin,&Dai, Ning.(2023).Coexistent VO2 (M) and VO2 (B) polymorphous thin films with multiphase-driven insulator-metal transition.NANOMATERIALS,13(9).
MLA	Qiu, Mengxia,et al."Coexistent VO2 (M) and VO2 (B) polymorphous thin films with multiphase-driven insulator-metal transition".NANOMATERIALS 13.9(2023).