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Machine Learning-Based Device Modeling and Performance Optimization for FinFETs
2023-04-01
发表期刊IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS (IF:4.0[JCR-2023],3.7[5-Year])
ISSN1558-3791
卷号70期号:4页码:1585-1589
发表状态已发表
DOI10.1109/TCSII.2022.3224172
摘要This brief introduces a machine learning based framework to model FinFET’s I-V and C-V curves with artificial neural networks and to further optimize FinFET’s performance on DC and AC characteristics. Our ML-based device model for FinFETs takes $V_{gs}$ and other nine parameters that define geometry, doping, stress, and work function profile as input variables. Experimental results show that our ML-based device model can predict current and capacitance accurately. Besides, the proposed ML-based performance optimization flow is a promising alternative to the traditional design of experiment method based on technology computer-aided design simulations. Our optimization flow can locate optimized device features accurately and require fewer simulations. Our work demonstrates that ML can perform compact modeling of advanced devices with high accuracy, and the trained ANN models can accelerate performance optimization.
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收录类别SCI ; EI
来源库IEEE
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/294875
专题信息科学与技术学院
信息科学与技术学院_PI研究组_周平强组
信息科学与技术学院_博士生
作者单位
School of Information Science and Technology, ShanghaiTech University, Shanghai, China
第一作者单位信息科学与技术学院
第一作者的第一单位信息科学与技术学院
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Huifan Zhang,Youliang Jing,Pingqiang Zhou. Machine Learning-Based Device Modeling and Performance Optimization for FinFETs[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS,2023,70(4):1585-1589.
APA Huifan Zhang,Youliang Jing,&Pingqiang Zhou.(2023).Machine Learning-Based Device Modeling and Performance Optimization for FinFETs.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS,70(4),1585-1589.
MLA Huifan Zhang,et al."Machine Learning-Based Device Modeling and Performance Optimization for FinFETs".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS 70.4(2023):1585-1589.
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