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| The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss | |
| 2023-03 | |
| Source Publication | MICROMACHINES
 |
| EISSN | 2072-666X |
| Volume | 14Issue:3 |
| DOI | 10.3390/mi14030583 |
| Abstract | When AlN thin films are deposited directly on the high-resistance silicon (HR-Si) substrate, a conductive layer will be formed on the HR-Si surface. This phenomenon is called the parasitic surface conduction (PSC) effect. The presence of the PSC effect will increase the power consumption of electronic components. Therefore, it is necessary to reduce the PSC effect. In prior technology, the polysilicon layer is usually used as the trap-rich layer to reduce the PSC effect. Experiments show that compared to AlN films deposited directly on HR-Si, the AlN substrates with polysilicon introduced on HR-Si have less radio frequency (RF) loss. To verify the effect of polysilicon on RF loss, polysilicon films of three different thicknesses and several different roughnesses were introduced. The results show that the thickness of the polysilicon will affect the RF loss, while the roughness has almost no effect on it. The polysilicon trap-rich layer can reduce the RF loss, which gradually becomes smaller as the polysilicon thickness increases. © 2023 by the authors. |
| Keyword | Conductive films III-V semiconductors Polycrystalline materials Polysilicon Silicon compounds Substrates Thin films Timing circuits Circuit loss CPW Filter circuits High resistance Parasitic surface conduction Parasitics Radio-frequency filters Radio-frequency loss Surface conductance Trap rich |
| URL | 查看原文 |
| Indexed By | EI |
| Language | 英语 |
| Publisher | MDPI |
| EI Accession Number | 20231613886623 |
| EI Keywords | Aluminum nitride |
| EI Classification Number | 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 708.2 Conducting Materials - 712.1 Semiconducting Materials - 713.4 Pulse Circuits - 804.1 Organic Compounds - 804.2 Inorganic Compounds - 933.1 Crystalline Solids |
| Original Document Type | Journal article (JA) |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/294834 |
| Collection | 信息科学与技术学院 信息科学与技术学院_公共科研平台_机电能源与电子器件科研平台 信息科学与技术学院_硕士生 |
| Corresponding Author | Liu, Fengyu |
| Affiliation | 1.School of Microelectronics, Shanghai University, Shanghai; 200444, China; 2.Changzhou Bawnovation Microelectronics Co., Ltd, Changzhou; 213166, China; 3.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China |
| Corresponding Author Affilication | School of Information Science and Technology |
| Recommended Citation GB/T 7714 | Xu, Tian,Zou, Yali,Huang, Xuan,et al. The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss[J]. MICROMACHINES,2023,14(3). |
| APA | Xu, Tian.,Zou, Yali.,Huang, Xuan.,Wu, Junmin.,Wu, Shihao.,...&Liu, Fengyu.(2023).The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss.MICROMACHINES,14(3). |
| MLA | Xu, Tian,et al."The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss".MICROMACHINES 14.3(2023). |
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