The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss

doi:10.3390/mi14030583

	The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss
	Xu, Tian 1; Zou, Yali 1; Huang, Xuan 2; Wu, Junmin 2; Wu, Shihao 2; Liu, Yuhao 1; Xu, Xuankai3 ; Liu, Fengyu3
	2023-03
发表期刊	MICROMACHINES (IF:3.0[JCR-2023],3.0[5-Year])
EISSN	2072-666X
卷号	14 期号:3
DOI	10.3390/mi14030583
摘要	When AlN thin films are deposited directly on the high-resistance silicon (HR-Si) substrate, a conductive layer will be formed on the HR-Si surface. This phenomenon is called the parasitic surface conduction (PSC) effect. The presence of the PSC effect will increase the power consumption of electronic components. Therefore, it is necessary to reduce the PSC effect. In prior technology, the polysilicon layer is usually used as the trap-rich layer to reduce the PSC effect. Experiments show that compared to AlN films deposited directly on HR-Si, the AlN substrates with polysilicon introduced on HR-Si have less radio frequency (RF) loss. To verify the effect of polysilicon on RF loss, polysilicon films of three different thicknesses and several different roughnesses were introduced. The results show that the thickness of the polysilicon will affect the RF loss, while the roughness has almost no effect on it. The polysilicon trap-rich layer can reduce the RF loss, which gradually becomes smaller as the polysilicon thickness increases. © 2023 by the authors.
关键词	Conductive films III-V semiconductors Polycrystalline materials Polysilicon Silicon compounds Substrates Thin films Timing circuits Circuit loss CPW Filter circuits High resistance Parasitic surface conduction Parasitics Radio-frequency filters Radio-frequency loss Surface conductance Trap rich
URL	查看原文
收录类别	EI
语种	英语
出版者	MDPI
EI入藏号	20231613886623
EI主题词	Aluminum nitride
EI分类号	549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 708.2 Conducting Materials - 712.1 Semiconducting Materials - 713.4 Pulse Circuits - 804.1 Organic Compounds - 804.2 Inorganic Compounds - 933.1 Crystalline Solids
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/294834
专题	信息科学与技术学院信息科学与技术学院_公共科研平台_机电能源与电子器件科研平台信息科学与技术学院_硕士生
通讯作者	Liu, Fengyu
作者单位	1.School of Microelectronics, Shanghai University, Shanghai; 200444, China; 2.Changzhou Bawnovation Microelectronics Co., Ltd, Changzhou; 213166, China; 3.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China
通讯作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Xu, Tian,Zou, Yali,Huang, Xuan,et al. The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss[J]. MICROMACHINES,2023,14(3).
APA	Xu, Tian.,Zou, Yali.,Huang, Xuan.,Wu, Junmin.,Wu, Shihao.,...&Liu, Fengyu.(2023).The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss.MICROMACHINES,14(3).
MLA	Xu, Tian,et al."The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss".MICROMACHINES 14.3(2023).