The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss
2023-03
Source PublicationMICROMACHINES
EISSN2072-666X
Volume14Issue:3
DOI10.3390/mi14030583
AbstractWhen AlN thin films are deposited directly on the high-resistance silicon (HR-Si) substrate, a conductive layer will be formed on the HR-Si surface. This phenomenon is called the parasitic surface conduction (PSC) effect. The presence of the PSC effect will increase the power consumption of electronic components. Therefore, it is necessary to reduce the PSC effect. In prior technology, the polysilicon layer is usually used as the trap-rich layer to reduce the PSC effect. Experiments show that compared to AlN films deposited directly on HR-Si, the AlN substrates with polysilicon introduced on HR-Si have less radio frequency (RF) loss. To verify the effect of polysilicon on RF loss, polysilicon films of three different thicknesses and several different roughnesses were introduced. The results show that the thickness of the polysilicon will affect the RF loss, while the roughness has almost no effect on it. The polysilicon trap-rich layer can reduce the RF loss, which gradually becomes smaller as the polysilicon thickness increases. © 2023 by the authors.
KeywordConductive films III-V semiconductors Polycrystalline materials Polysilicon Silicon compounds Substrates Thin films Timing circuits Circuit loss CPW Filter circuits High resistance Parasitic surface conduction Parasitics Radio-frequency filters Radio-frequency loss Surface conductance Trap rich
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Indexed ByEI
Language英语
PublisherMDPI
EI Accession Number20231613886623
EI KeywordsAluminum nitride
EI Classification Number549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals - 708.2 Conducting Materials - 712.1 Semiconducting Materials - 713.4 Pulse Circuits - 804.1 Organic Compounds - 804.2 Inorganic Compounds - 933.1 Crystalline Solids
Original Document TypeJournal article (JA)
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Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/294834
Collection信息科学与技术学院
信息科学与技术学院_公共科研平台_机电能源与电子器件科研平台
信息科学与技术学院_硕士生
Corresponding AuthorLiu, Fengyu
Affiliation
1.School of Microelectronics, Shanghai University, Shanghai; 200444, China;
2.Changzhou Bawnovation Microelectronics Co., Ltd, Changzhou; 213166, China;
3.School of Information Science and Technology, ShanghaiTech University, Shanghai; 201210, China
Corresponding Author AffilicationSchool of Information Science and Technology
Recommended Citation
GB/T 7714
Xu, Tian,Zou, Yali,Huang, Xuan,et al. The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss[J]. MICROMACHINES,2023,14(3).
APA Xu, Tian.,Zou, Yali.,Huang, Xuan.,Wu, Junmin.,Wu, Shihao.,...&Liu, Fengyu.(2023).The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss.MICROMACHINES,14(3).
MLA Xu, Tian,et al."The Effect of Defect Charge and Parasitic Surface Conductance on Aluminum Nitride RF Filter Circuit Loss".MICROMACHINES 14.3(2023).
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