1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

doi:10.1021/acsphotonics.7b00240

	1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
	Wu, Xiaoyan 1,2,4; Pan, Wenwu 1,2; Zhang, Zhenpu1,3 ; Li, Yaoyao 1; Cao, Chunfang 1; Liu, Juanjuan 1,2; Zhang, Liyao 1; Song, Yuxin 1; Ou, Haiyan 4; Wang, Shumin1,3,5
	2017-06
发表期刊	ACS PHOTONICS (IF:6.5[JCR-2023],6.6[5-Year])
ISSN	2330-4022
卷号	4 期号:6 页码:1322-1326
发表状态	已发表
DOI	10.1021/acsphotonics.7b00240
摘要	As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.
关键词	GaAsBi molecular beam epitaxy laser diodes quantum well uncooled laser
收录类别	SCI ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Optics ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Optics ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000404098200005
出版者	AMER CHEMICAL SOC
EI入藏号	20172603844301
EI主题词	Energy efficiency ; Epitaxial growth ; Molecular beam epitaxy ; Semiconductor lasers ; Semiconductor quantum wells ; Temperature
EI分类号	Energy Conservation:525.2 ; Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Lasers, General:744.1 ; Semiconductor Lasers:744.4.1 ; Chemical Operations:802.3 ; Atomic and Molecular Physics:931.3
WOS关键词	TEMPERATURE-DEPENDENCE ; SEMICONDUCTOR-LASERS ; BAND-GAP ; GAAS1-XBIX ; RECOMBINATION ; WAVELENGTH ; GAINNAS ; DIODES
原始文献类型	Article
通讯作者	Li, Yaoyao ; Wang, Shumin
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2923
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_博士生
通讯作者	Li, Yaoyao; Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Shanghai 201210, Peoples R China 4.Tech Univ Denmark, Dept Photon Engn, DK-2800 Lyngby, Denmark 5.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
通讯作者单位	上海科技大学
推荐引用方式 GB/T 7714	Wu, Xiaoyan,Pan, Wenwu,Zhang, Zhenpu,et al. 1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy[J]. ACS PHOTONICS,2017,4(6):1322-1326.
APA	Wu, Xiaoyan.,Pan, Wenwu.,Zhang, Zhenpu.,Li, Yaoyao.,Cao, Chunfang.,...&Wang, Shumin.(2017).1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy.ACS PHOTONICS,4(6),1322-1326.
MLA	Wu, Xiaoyan,et al."1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy".ACS PHOTONICS 4.6(2017):1322-1326.