Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes

doi:10.1364/OE.26.035034

	Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes
	Chen, Yaojiang1 ; Zhao, Xuyi 2; Huang, Jian1 ; Deng, Zhuo1 ; Cao, Chunfang 2; Gong, Qian 2; Chen, Baile1
	2018-12-24
发表期刊	OPTICS EXPRESS
ISSN	1094-4087
卷号	26 期号:26 页码:35034-35045
发表状态	已发表
DOI	10.1364/OE.26.035034
摘要	In this work, we demonstrated a normal incident PIN InGaAs/GaAsSb type-II multiple quantum wells (MQW) photodiode on InP substrate for 2 mu m wavelength high-speed operation. The photodiode has a responsivity of 0.35 A/W at mom temperature at 2 mu m, and a 3 dB bandwidth of 3.7 GHz. A carrier dynamic model is developed to study the bandwidth of the multiple quantum wells photodiode. Simulation results match the experimental data well, and analysis shows that hole transport limits the 3 dB bandwidth performance. By optimizing the MQW design, higher bandwidth performance (>10 GHz) can be achieved. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	ShanghaiTech University[F-0203-16-002]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000454149000132
出版者	OPTICAL SOC AMER
EI入藏号	20190106330394
EI主题词	Antimony compounds ; Bandwidth ; Dynamic models ; Gallium compounds ; III-V semiconductors ; Indium phosphide ; Photodiodes ; Semiconducting indium ; Semiconducting indium gallium arsenide ; Semiconducting indium phosphide
EI分类号	Single Element Semiconducting Materials:712.1.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Information Theory and Signal Processing:716.1 ; Inorganic Compounds:804.2 ; Mathematics:921
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/29187
专题	信息科学与技术学院_博士生信息科学与技术学院_PI研究组_陈佰乐组信息科学与技术学院_硕士生
通讯作者	Chen, Baile
作者单位	1.Shanghai Tech Univ, Sch Informat Sci & Technol, Optoelect Device Lab, Shanghai 201210, Peoples R China 2.Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Chen, Yaojiang,Zhao, Xuyi,Huang, Jian,et al. Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes[J]. OPTICS EXPRESS,2018,26(26):35034-35045.
APA	Chen, Yaojiang.,Zhao, Xuyi.,Huang, Jian.,Deng, Zhuo.,Cao, Chunfang.,...&Chen, Baile.(2018).Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes.OPTICS EXPRESS,26(26),35034-35045.
MLA	Chen, Yaojiang,et al."Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes".OPTICS EXPRESS 26.26(2018):35034-35045.