High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics

doi:10.1039/c8tc04691c

	High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics
	Wang, Haoliang1,2,3 ; Chen, Yan 1,2; Lim, Engliang 4; Wang, Xudong 1; Yuan, Sijian 4; Zhang, Xin 4; Lu, Haizhou 4; Wang, Jiao 4; Wu, Guangjian 1; Lin, Tie 1; Sun, Shuo 1; Wang, Jianlu 1; Zhan, Yiqiang 4; Shen, Hong 1; Meng, Xiangjian 1; Chu, Junhao1,3
	2018-12-14
发表期刊	JOURNAL OF MATERIALS CHEMISTRY C (IF:5.7[JCR-2023],6.0[5-Year])
ISSN	2050-7526
卷号	6 期号:46 页码:12714-12720
发表状态	已发表
DOI	10.1039/c8tc04691c
摘要	The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C6H5C2H4NH3)(2)SnI4) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization up and down states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W-1 and a high detectivity of 1.74 x 10(12) Jones under the polarization up state with an illumination intensity of 21 W cm(-2). In addition, low temperature solution-processed P(VDF-TrFE) and (C6H5C2H4NH3)(2)SnI4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.
收录类别	EI ; SCIE ; SCI
语种	英语
资助项目	Natural Science Foundation of Shanghai[16ZR1447600] ; Natural Science Foundation of Shanghai[17JC1400302]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000451761600033
出版者	ROYAL SOC CHEMISTRY
EI入藏号	20184906176355
EI主题词	Dielectric materials ; Ferroelectricity ; Fluorine compounds ; Perovskite ; Polarization ; Temperature
EI分类号	Minerals:482.2 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1 ; Semiconductor Devices and Integrated Circuits:714.2
WOS关键词	HALIDE PEROVSKITES ; LIGHT
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/29107
专题	物质科学与技术学院_硕士生物质科学与技术学院_特聘教授组_褚君浩组
通讯作者	Zhan, Yiqiang; Shen, Hong
作者单位	1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China 2.Univ Chinese Acad Sci, 19 Yuquan Rd, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Shanghai 201210, Peoples R China 4.Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
第一作者单位	上海科技大学
推荐引用方式 GB/T 7714	Wang, Haoliang,Chen, Yan,Lim, Engliang,et al. High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics[J]. JOURNAL OF MATERIALS CHEMISTRY C,2018,6(46):12714-12720.
APA	Wang, Haoliang.,Chen, Yan.,Lim, Engliang.,Wang, Xudong.,Yuan, Sijian.,...&Chu, Junhao.(2018).High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics.JOURNAL OF MATERIALS CHEMISTRY C,6(46),12714-12720.
MLA	Wang, Haoliang,et al."High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics".JOURNAL OF MATERIALS CHEMISTRY C 6.46(2018):12714-12720.