In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications
2023-03-01
Source PublicationMATERIALS;
ISSN1996-1944
EISSN1996-1944
Volume16Issue:5
Status已发表
DOI10.3390/ma16051781
AbstractAluminum scandium nitride (Al1−xScxN) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d33 of Al1−xScxN film. The measurement results quantitatively demonstrated the piezoelectric effect of Al1−xScxN films by lattice spacing variation upon applied external voltage. The as-extracted d33 had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d33 from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d33 of AlN and Al0.9Sc0.1N obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d33 characterization.
Keywordaluminum scandium nitride micro-electromechanical system piezoelectric coefficient substrate clamping effect synchrotron XRD
MOST Discipline CatalogueMaterials Science (all) ; Condensed Matter Physics
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Indexed BySCOPUS ; EI ; SCI
Language英语
Funding ProjectNational Natural Science Foundation of China[62274171] ; Natural Science Foundation of Shanghai[21ZR1474500] ; Shanghai Technology Innovation Project["20DZ1100603","22501100700"]
WOS Research AreaChemistry ; Materials Science ; Metallurgy & Metallurgical Engineering ; Physics
WOS SubjectChemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000947086100001
PublisherMDPI
EI Accession Number20231113727956
EI KeywordsX ray diffraction
EI Classification Number701.1 Electricity: Basic Concepts and Phenomena ; 704.2 Electric Equipment ; 712.1 Semiconducting Materials ; 804.1 Organic Compounds ; 804.2 Inorganic Compounds ; 933.1 Crystalline Solids
Original Document TypeArticle
Scopus ID2-s2.0-85149892260
Source DataSCOPUS
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/286528
Collection信息科学与技术学院
信息科学与技术学院_PI研究组_杨雨梦组
Corresponding AuthorMu, Zhiqiang; Yu, Wenjie
Affiliation
1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
3.ShanghaiTech Univ, Shanghai Engn Res Ctr Energy Efficient & Custom AI, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
4.Shanghai Univ, Sch Microelect, Shanghai 200444, Peoples R China
5.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China
Recommended Citation
GB/T 7714
Jiang, Wenzheng,Zhu, Lei,Chen, Lingli,et al. In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications[J]. MATERIALS;,2023,16(5).
APA Jiang, Wenzheng.,Zhu, Lei.,Chen, Lingli.,Yang, Yumeng.,Yu, Xi.,...&Yu, Wenjie.(2023).In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications.MATERIALS;,16(5).
MLA Jiang, Wenzheng,et al."In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications".MATERIALS; 16.5(2023).
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