In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications

doi:10.3390/ma16051781

	In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications
	Jiang, Wenzheng 1,2; Zhu, Lei 1,2; Chen, Lingli 1,2; Yang, Yumeng3 ; Yu, Xi 4; Li, Xiaolong 5; Mu, Zhiqiang 1,2; Yu, Wenjie 1,2
	2023-03-01
发表期刊	MATERIALS;
ISSN	1996-1944
EISSN	1996-1944
卷号	16 期号:5
发表状态	已发表
DOI	10.3390/ma16051781
摘要	Aluminum scandium nitride (Al1−xScxN) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d33 of Al1−xScxN film. The measurement results quantitatively demonstrated the piezoelectric effect of Al1−xScxN films by lattice spacing variation upon applied external voltage. The as-extracted d33 had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d33 from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d33 of AlN and Al0.9Sc0.1N obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d33 characterization.
关键词	aluminum scandium nitride micro-electromechanical system piezoelectric coefficient substrate clamping effect synchrotron XRD
学科门类	Materials Science (all) ; Condensed Matter Physics
URL	查看原文
收录类别	SCOPUS ; EI ; SCI
语种	英语
资助项目	National Natural Science Foundation of China[62274171] ; Natural Science Foundation of Shanghai[21ZR1474500] ; Shanghai Technology Innovation Project["20DZ1100603","22501100700"]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000947086100001
出版者	MDPI
EI入藏号	20231113727956
EI主题词	X ray diffraction
EI分类号	701.1 Electricity: Basic Concepts and Phenomena ; 704.2 Electric Equipment ; 712.1 Semiconducting Materials ; 804.1 Organic Compounds ; 804.2 Inorganic Compounds ; 933.1 Crystalline Solids
原始文献类型	Article
Scopus 记录号	2-s2.0-85149892260
来源库	SCOPUS
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/286528
专题	信息科学与技术学院信息科学与技术学院_PI研究组_杨雨梦组
通讯作者	Mu, Zhiqiang; Yu, Wenjie
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Shanghai Engn Res Ctr Energy Efficient & Custom AI, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 4.Shanghai Univ, Sch Microelect, Shanghai 200444, Peoples R China 5.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China
推荐引用方式 GB/T 7714	Jiang, Wenzheng,Zhu, Lei,Chen, Lingli,et al. In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications[J]. MATERIALS;,2023,16(5).
APA	Jiang, Wenzheng.,Zhu, Lei.,Chen, Lingli.,Yang, Yumeng.,Yu, Xi.,...&Yu, Wenjie.(2023).In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications.MATERIALS;,16(5).
MLA	Jiang, Wenzheng,et al."In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications".MATERIALS; 16.5(2023).