Phase diagram of twisted bilayer graphene at filling factor ν=±3
2023-02-15
发表期刊PHYSICAL REVIEW B; (IF:3.2[JCR-2023],3.3[5-Year])
ISSN2469-9950
EISSN2469-9969
卷号107期号:7
发表状态已发表
DOI10.1103/PhysRevB.107.075156
摘要We study the correlated insulating phases of twisted bilayer graphene (TBG) in the absence of lattice strain at integer filling ν=±3. Using the self-consistent Hartree-Fock method on a particle-hole symmetric model and allowing translation symmetry breaking terms, we obtain the phase diagram with respect to the ratio of AA interlayer hopping (w0) and AB interlayer hopping (w1). When the interlayer hopping ratio is close to the chiral limit (w0/w10.5), a quantum anomalous Hall state with Chern number νc=±1 can be observed consistent with previous studies. Around the realistic value w0/w1≈0.8, we find a spin and valley polarized, translation symmetry breaking, state with C2zT symmetry, a charge gap and a doubling of the moiré unit cell, dubbed the C2zT stripe phase. The real-space total charge distribution of this C2zT stripe phase in the flat band limit does not have modulation between different moiré unit cells, although the charge density in each layer is modulated, and the translation symmetry is strongly broken. Other symmetries, including C2z, C2x, particle-hole symmetry P, and the topology of the C2zT stripe phase, are also discussed in detail. We observed braiding and annihilation of the Dirac nodes by continuously turning on the order parameter to its fully self-consistent value, and provide a detailed explanation of the mechanism for the charge gap opening despite preserving C2zT and valley U(1) symmetries. In the transition region between the quantum anomalous Hall phase and the C2zT stripe phase, we find an additional competing state with comparable energy corresponding to a phase with a tripling of the moiré unit cell.
关键词Annihilation Graphene Quantum theory Bilayer Graphene Charge gap Filling factor Insulating phase Lattice strain Stripe phase Symmetry breakings Translation symmetry Twisted bilayers Unit cells
学科门类Electronic, Optical and Magnetic Materials ; Condensed Matter Physics
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收录类别SCOPUS ; EI ; SCI
语种英语
资助项目DOE[DE-SC0016239] ; Gordon and Betty Moore Founda- tion[GBMF11070] ; ShanghaiTech University[GBMF11070] ; National High Magnetic Field Laboratory through NSF["101017733","731473","10107733"] ; State of Florida[101020833] ; null[12074276] ; null[DMR-1916958] ; null[DMR-1157490]
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:000944157700009
出版者AMER PHYSICAL SOC
EI入藏号20231113702343
EI主题词Phase diagrams
EI分类号761 Nanotechnology ; 804 Chemical Products Generally ; 931.4 Quantum Theory ; Quantum Mechanics ; 932.1 High Energy Physics
原始文献类型Article
Scopus 记录号2-s2.0-85149671843
来源库SCOPUS
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/286511
专题物质科学与技术学院
物质科学与技术学院_PI研究组_康健
通讯作者Xie, Fang
作者单位
1.Princeton Univ, Dept Phys, Princeton, NJ 08544 USA
2.Rice Univ, Dept Phys & Astron, Houston, TX 77005 USA
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
4.Donostia Int Phys Ctr, P Manuel De Lardizabal 4, San Sebastian 20018, Spain
5.Basque Fdn Sci, IKERBASQUE, Bilbao, Spain
6.Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
7.Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA
8.Univ Paris Diderot, Univ PSL, Sorbonne Univ,Sorbonne Paris Cite, Lab Phys,Ecole Normale Super,ENS, F-75005 Paris, France
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GB/T 7714
Xie, Fang,Kang, Jian,Bernevig, Andrei,et al. Phase diagram of twisted bilayer graphene at filling factor ν=±3[J]. PHYSICAL REVIEW B;,2023,107(7).
APA Xie, Fang,Kang, Jian,Bernevig, Andrei,Vafek, Oskar,&Regnault, Nicolas.(2023).Phase diagram of twisted bilayer graphene at filling factor ν=±3.PHYSICAL REVIEW B;,107(7).
MLA Xie, Fang,et al."Phase diagram of twisted bilayer graphene at filling factor ν=±3".PHYSICAL REVIEW B; 107.7(2023).
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