Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate

doi:10.1049/ell2.12740

	Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate
	Mu, Zhiqiang 1; Zhou, Hongyang 1; Yang, Yumeng2 ; Liu, Qiang 1; Wei, Xing 1; Yu, Wenjie 1
	2023-02-01
发表期刊	ELECTRONICS LETTERS (IF:0.7[JCR-2023],0.9[5-Year])
ISSN	0013-5194
EISSN	1350-911X
卷号	59 期号:4
发表状态	已发表
DOI	10.1049/ell2.12740
摘要	A novel junctionless gate-all-around (GAA) transistor with ultrathin nanosheet GAA channel and self-aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler fabrication process. Devices with as thin as 13-nm nanosheet GAA channel thickness exhibit excellent electrical characteristics: on/off current ratio of 10(6) and on-state drive current of 58 mu A/mu m. Although the parasitic planar channel component still exists, the device performance is decisively dominated by the GAA channel, and further boosted by the junction-free bulk conduction mechanism and the self-aligned RSD structure.
关键词	nanofabrication semiconductor device manufacture silicon-on-insulator transistors
URL	查看原文
收录类别	SCI ; SCOPUS ; EI
语种	英语
资助项目	National Natural Science Foundation of China[62274171] ; Shanghai Natural Science Foundation[21ZR1474500] ; Shanghai Technology Innovation Action Plan[22501100700]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000937590500001
出版者	WILEY
EI入藏号	20231113704802
EI主题词	Transistors
EI分类号	714.2 Semiconductor Devices and Integrated Circuits ; 761 Nanotechnology ; 933 Solid State Physics
原始文献类型	Journal article (JA)
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/284211
专题	信息科学与技术学院_PI研究组_杨雨梦组
通讯作者	Mu, Zhiqiang; Yu, Wenjie
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai, Peoples R China 2.ShanghaiTech Univ, Shanghai Engn Res Ctr Energy Efficient & Custom AI, Sch Informat Sci & Technol, Shanghai, Peoples R China
推荐引用方式 GB/T 7714	Mu, Zhiqiang,Zhou, Hongyang,Yang, Yumeng,et al. Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate[J]. ELECTRONICS LETTERS,2023,59(4).
APA	Mu, Zhiqiang,Zhou, Hongyang,Yang, Yumeng,Liu, Qiang,Wei, Xing,&Yu, Wenjie.(2023).Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate.ELECTRONICS LETTERS,59(4).
MLA	Mu, Zhiqiang,et al."Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate".ELECTRONICS LETTERS 59.4(2023).