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ShanghaiTech University Knowledge Management System
Record-high mobility and extreme magnetoresistance on kagome-lattice in compensated semimetal Ni3In2S2 | |
其他题名 | Kagome晶格补偿型半金属Ni3In2S2创纪录的高迁移 率和极大磁电阻现象 |
2023 | |
发表期刊 | SCIENCE CHINA MATERIALS (IF:6.8[JCR-2023],6.6[5-Year]) |
ISSN | 2095-8226 |
EISSN | 2199-4501 |
卷号 | 66期号:5页码:2032-2038 |
DOI | 10.1007/s40843-022-2348-9 |
摘要 | The kagome-lattice crystal hosts various intriguing properties including the frustrated magnetism, charge order, topological state, superconductivity and correlated phenomena. To achieve high-performance kagome-lattice compounds for electronic and spintronic applications, careful tuning of the band structure would be desired. Here, the electronic structures of kagome-lattice crystal Ni3In2S2 were investigated by transport measurements, angle-resolved photoemission spectroscopy as well as ab initio calculations. The transport measurements reveal Ni3In2S2 as a compensated semimetal with record-high carrier mobility (∼8683 and 7356 cm2 V−1 S−1 for holes and electrons) and extreme magnetoresistance (15,518% at 2 K and 13 T) among kagome-lattice materials. These extraordinary properties are well explained by its band structure with indirect gap, small electron/hole pockets and large bandwidth of the 3d electrons of Ni on the kagome lattice. This work demonstrates that the crystal field and doping serve as the key tuning knobs to optimize the transport properties in kagome-lattice crystals. Our work provides material basis and optimization routes for kagome-lattice semimetals towards electronics and spintronics applications. [Figure not available: see fulltext.] © 2023, Science China Press. |
关键词 | Band structure Doping (additives) Magnetoresistance Nickel compounds Photoelectron spectroscopy Tuning Compensated semimetal Crystal host Electronic band structure Electronics applications Extreme magnetoresistance High mobility Kagome lattice Property Spintronics application Transport measurements |
URL | 查看原文 |
收录类别 | EI ; SCOPUS |
语种 | 英语 |
出版者 | Science Press (China) |
EI入藏号 | 20230713580103 |
EI主题词 | Electronic structure |
EI分类号 | 701.2 Magnetism: Basic Concepts and Phenomena ; 933 Solid State Physics |
原始文献类型 | Article in Press |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/281949 |
专题 | 物质科学与技术学院_博士生 物质科学与技术学院_PI研究组_柳仲楷组 物质科学与技术学院_PI研究组_郭艳峰组 物质科学与技术学院_特聘教授组_陈宇林 物质科学与技术学院_公共科研平台_拓扑物理实验室 大科学中心_公共科研平台_大科学装置建设部 |
通讯作者 | Shi, Wujun; Chen, Yulin; Liu, Enke; Liu, Zhongkai |
作者单位 | 1.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 2.University of Chinese Academy of Sciences, Beijing; 100049, China; 3.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing; 100190, China; 4.State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing; 100084, China; 5.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China; 6.Center for Transformative Science, ShanghaiTech University, Shanghai; 201210, China; 7.Shanghai High Repetition Rate XFEL and Extreme Light Facility (SHINE), ShanghaiTech University, Shanghai; 201210, China; 8.Department of Physics, University of Oxford, Oxford; OX1 3PU, United Kingdom |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 上海科技大学; 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Fang, Hongwei,Lyu, Meng,Su, Hao,et al. Record-high mobility and extreme magnetoresistance on kagome-lattice in compensated semimetal Ni3In2S2[J]. SCIENCE CHINA MATERIALS,2023,66(5):2032-2038. |
APA | Fang, Hongwei.,Lyu, Meng.,Su, Hao.,Yuan, Jian.,Li, Yiwei.,...&Liu, Zhongkai.(2023).Record-high mobility and extreme magnetoresistance on kagome-lattice in compensated semimetal Ni3In2S2.SCIENCE CHINA MATERIALS,66(5),2032-2038. |
MLA | Fang, Hongwei,et al."Record-high mobility and extreme magnetoresistance on kagome-lattice in compensated semimetal Ni3In2S2".SCIENCE CHINA MATERIALS 66.5(2023):2032-2038. |
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