Trade-Off for Better Balanced Nonlinear Optical Performance with Disordered Si in ZnGeP2

doi:10.1021/acs.chemmater.2c03042

	Trade-Off for Better Balanced Nonlinear Optical Performance with Disordered Si in ZnGeP2
	Yang, Shunda1,4 ; Lin, Chensheng 3; Chen, Kaichuang 1; Fan, Huixin 1; Chen, Jindong 1; Fang, Shenghao 1; Ye, Ning 2; Luo, Min 1
	2022-12-27
发表期刊	CHEMISTRY OF MATERIALS (IF:7.2[JCR-2023],8.4[5-Year])
ISSN	0897-4756
EISSN	1520-5002
卷号	34 期号:24 页码:11007-11013
发表状态	正式接收
DOI	10.1021/acs.chemmater.2c03042
摘要	ZnGeP2(ZGP) possesses prominent mid-far infrared nonlinear optical (NLO) performance but suffers from a narrow bandgap. A comparative analysis revealed that the bandgap could be enhanced by substituting Si for Ge in ZGP, successfully synthesizing a series of ZnSixGe1-xP2crystals with enlarged bandgaps compared with that of ZGP. Interestingly, when the x varies from 0 to 0.5, in addition to obtaining improved bandgaps, the second-harmonic generation (SHG) responses are enhanced simultaneously, which is abnormal because they are usually inversely proportional. Theoretical calculations with special quasirandom structures show that the NLO coefficient decreases gradually with increasing Si content, but the decrease is tiny in the 0-50% range and acute in the 50-100% range of Si. The transmission experiment of the ZnSi0.25Ge0.75P2wafer indicates that the introduction of silicon effectively improves the transmittance in the 1-2 μm range. The enhanced transmittance and maintained NLO coefficients result in a better macroscopic SHG response. Combined with an increased laser-induced damage threshold, the introduction of Si becomes a practical approach to improve performance and extend the application of ZGP crystals. © 2022 American Chemical Society. All rights reserved.
关键词	Economic and social effects Energy gap Germanium compounds Laser damage Nonlinear optics Silicon compounds Silicon wafers Zinc compounds Comparative analyzes Far infrared Narrow bandgap Non-linear optical Non-linear optical coefficients Optical performance Si content Special quasi-random structures Theoretical calculations Trade off
收录类别	SCI
语种	英语
出版者	American Chemical Society
EI入藏号	20225013241116
EI主题词	Harmonic generation
EI分类号	714.2 Semiconductor Devices and Integrated Circuits ; 741.1.1 Nonlinear Optics ; 744.8 Laser Beam Interactions ; 971 Social Sciences
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/281947
专题	物质科学与技术学院_博士生
通讯作者	Fang, Shenghao; Luo, Min
作者单位	1.Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Fujian, Fuzhou; 350002, China; 2.Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, Tianjin University of Technology, Tianjin; 300384, China; 3.State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fujian, Fuzhou; 350002, China; 4.ShanghaiTech University, Shanghai; 200120, China
第一作者单位	上海科技大学
推荐引用方式 GB/T 7714	Yang, Shunda,Lin, Chensheng,Chen, Kaichuang,et al. Trade-Off for Better Balanced Nonlinear Optical Performance with Disordered Si in ZnGeP2[J]. CHEMISTRY OF MATERIALS,2022,34(24):11007-11013.
APA	Yang, Shunda.,Lin, Chensheng.,Chen, Kaichuang.,Fan, Huixin.,Chen, Jindong.,...&Luo, Min.(2022).Trade-Off for Better Balanced Nonlinear Optical Performance with Disordered Si in ZnGeP2.CHEMISTRY OF MATERIALS,34(24),11007-11013.
MLA	Yang, Shunda,et al."Trade-Off for Better Balanced Nonlinear Optical Performance with Disordered Si in ZnGeP2".CHEMISTRY OF MATERIALS 34.24(2022):11007-11013.