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ShanghaiTech University Knowledge Management System
Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes | |
2023 | |
发表期刊 | NANO LETTERS (IF:9.6[JCR-2023],10.1[5-Year]) |
ISSN | 1530-6984 |
EISSN | 1530-6992 |
卷号 | 23期号:3页码:1061-1067 |
发表状态 | 已发表 |
DOI | 10.1021/acs.nanolett.2c04670 |
摘要 | Thin films of ZnO nanocrystals are actively pursued as electron-transporting layers (ETLs) in quantum-dot light-emitting diodes (QLEDs). However, the developments of ZnO-based ETLs are highly engineering oriented and the design of ZnO-based ETLs remains empirical. Here, we identified a previously overlooked efficiency-loss channel associated with the ZnO-based ETLs: i.e., interfacial exciton quenching induced by surface-bound ethanol. Accordingly, we developed a general surface-treatment procedure to replace the redox-active surface-bound ethanol with electrochemically inert alkali carboxylates. Characterization results show that the surface treatment procedure does not change other key properties of the ETLs, such as the conductance and work function. Our single-variable experimental design unambiguously demonstrates that improving the electrochemical stabilities of the ZnO ETLs leads to QLEDs with a higher efficiency and longer operational lifetime. Our work provides a crucial guideline to design ZnO-based ETLs for optoelectronic devices. |
关键词 | quantum dot light-emitting diodes zinc oxide electron-transporting layer electrochemically stable ligands surface treatment |
URL | 查看原文 |
收录类别 | SCI ; EI ; SCOPUS |
语种 | 英语 |
资助项目 | National Key R&D Program of China[ |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS记录号 | WOS:000921700100001 |
出版者 | AMER CHEMICAL SOC |
EI入藏号 | 20230513458854 |
EI主题词 | Zinc oxide |
EI分类号 | 712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 761 Nanotechnology ; 801.4 Physical Chemistry ; 802.2 Chemical Reactions ; 804.1 Organic Compounds ; 804.2 Inorganic Compounds ; 913.1 Production Engineering ; 933.1 Crystalline Solids |
原始文献类型 | Journal article (JA) |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/278863 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_濮超丹组 |
通讯作者 | Kong, Xueqian; Jin, Yizheng |
作者单位 | 1.Zhejiang Univ, Dept Chem, Zhejiang Key Lab Excited State Mat, Hangzhou 310027, Peoples R China 2.Zhejiang Univ, Coll Opt Sci & Engn, Int Res Ctr Adv Photon, Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China 3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Desui,Ma, Luying,Chen, Yunhua,et al. Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes[J]. NANO LETTERS,2023,23(3):1061-1067. |
APA | Chen, Desui.,Ma, Luying.,Chen, Yunhua.,Zhou, Xiaoqi.,Xing, Shiyu.,...&Jin, Yizheng.(2023).Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.NANO LETTERS,23(3),1061-1067. |
MLA | Chen, Desui,et al."Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes".NANO LETTERS 23.3(2023):1061-1067. |
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