Non-ideality Suppression and 16-state Multi-level Cell Storage Optimization in Phase Change Memory with Liner-like Circuit

	Non-ideality Suppression and 16-state Multi-level Cell Storage Optimization in Phase Change Memory with Liner-like Circuit
	Cheng Chen2
	2023-01
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES (IF:2.9[JCR-2023],2.9[5-Year])
ISSN	0018-9383
发表状态	已发表
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/274928
专题	物质科学与技术学院_博士生
作者单位	1.Shanghai Institute of Microsystem and Information Technology 2.ShanghaiTech University 3.University of Chinese Academy of Sciences
第一作者单位	上海科技大学
第一作者的第一单位	上海科技大学
推荐引用方式 GB/T 7714	Cheng Chen. Non-ideality Suppression and 16-state Multi-level Cell Storage Optimization in Phase Change Memory with Liner-like Circuit[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2023.
APA	Cheng Chen.(2023).Non-ideality Suppression and 16-state Multi-level Cell Storage Optimization in Phase Change Memory with Liner-like Circuit.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Cheng Chen."Non-ideality Suppression and 16-state Multi-level Cell Storage Optimization in Phase Change Memory with Liner-like Circuit".IEEE TRANSACTIONS ON ELECTRON DEVICES (2023).