ShanghaiTech University Knowledge Management System
SiC emitters for nanoscale vacuum electronics: A systematic study of cathode-anode gap by focused ion beam etching | |
2017-05 | |
发表期刊 | JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES |
ISSN | 1071-1023 |
卷号 | 35期号:3 |
发表状态 | 已发表 |
DOI | 10.1116/1.4979049 |
摘要 | Nanoscale vacuum electronics has been receiving much attention recently with the design and fabrication of vacuum field emission transistors and other devices. The performance and lifetime of these devices depend on the material choice for the emitters. Silicon carbide is a robust material with appealing work function and established fabrication processes. Field emission properties of SiC nanoemitters under different cathode-anode gaps are studied in this work with the aid of focused ion beam etching to control the gap precisely. When the electrode gap is as small as 20 nm, a considerable decrease in voltage and increase in field emission current are seen. When the electrode gap is decreased progressively, the emission current increases exponentially at a fixed collector voltage, and the absence of current saturation is ideal for device scaling. Simulations and Fowler-Nordheim equation are used to analyze the field emission characteristics. The emission is enhanced for both extremely short gaps and sharp emitter tips as expected. The present results for the diode-based system are useful for the design of future gated three terminal devices such as vacuum field emission transistors and field emission displays using SiC. (C) 2017 American Vacuum Society. |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | Project of National Natural Science Foundation of China[61327811] |
WOS研究方向 | Engineering ; Science & Technology - Other Topics ; Physics |
WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied |
WOS记录号 | WOS:000402053900018 |
出版者 | A V S AMER INST PHYSICS |
EI入藏号 | 20171503558463 |
EI主题词 | Anodes ; Cathodes ; Display devices ; Electrodes ; Electron emission ; Etching ; Field emission cathodes ; Focused ion beams ; Ion beams ; Nanotechnology ; Silicon carbide ; Vacuum technology |
EI分类号 | Vacuum Technology:633 ; Electron Tubes:714.1 ; Computer Peripheral Equipment:722.2 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; High Energy Physics:932.1 |
WOS关键词 | FIELD-EMISSION ; NANOSTRUCTURES ; DEPOSITION ; NANOWIRES |
原始文献类型 | Article |
引用统计 | 正在获取...
|
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2602 |
专题 | 信息科学与技术学院_特聘教授组_王跃林组 |
通讯作者 | Wang, Yuelin |
作者单位 | 1.Chinese Acad Sci Shanghai, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, Shanghai, Peoples R China 2.Univ ShanghaiTech, Sch Informat Sci & Technol, Shanghai 200120, Peoples R China 3.Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Meng,Li, Tie,Wang, Yuelin. SiC emitters for nanoscale vacuum electronics: A systematic study of cathode-anode gap by focused ion beam etching[J]. JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES,2017,35(3). |
APA | Liu, Meng,Li, Tie,&Wang, Yuelin.(2017).SiC emitters for nanoscale vacuum electronics: A systematic study of cathode-anode gap by focused ion beam etching.JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES,35(3). |
MLA | Liu, Meng,et al."SiC emitters for nanoscale vacuum electronics: A systematic study of cathode-anode gap by focused ion beam etching".JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES 35.3(2017). |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 |
个性服务 |
查看访问统计 |
谷歌学术 |
谷歌学术中相似的文章 |
[Liu, Meng]的文章 |
[Li, Tie]的文章 |
[Wang, Yuelin]的文章 |
百度学术 |
百度学术中相似的文章 |
[Liu, Meng]的文章 |
[Li, Tie]的文章 |
[Wang, Yuelin]的文章 |
必应学术 |
必应学术中相似的文章 |
[Liu, Meng]的文章 |
[Li, Tie]的文章 |
[Wang, Yuelin]的文章 |
相关权益政策 |
暂无数据 |
收藏/分享 |
修改评论
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。