SiC emitters for nanoscale vacuum electronics: A systematic study of cathode-anode gap by focused ion beam etching
2017-05
发表期刊JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES
ISSN1071-1023
卷号35期号:3
发表状态已发表
DOI10.1116/1.4979049
摘要

Nanoscale vacuum electronics has been receiving much attention recently with the design and fabrication of vacuum field emission transistors and other devices. The performance and lifetime of these devices depend on the material choice for the emitters. Silicon carbide is a robust material with appealing work function and established fabrication processes. Field emission properties of SiC nanoemitters under different cathode-anode gaps are studied in this work with the aid of focused ion beam etching to control the gap precisely. When the electrode gap is as small as 20 nm, a considerable decrease in voltage and increase in field emission current are seen. When the electrode gap is decreased progressively, the emission current increases exponentially at a fixed collector voltage, and the absence of current saturation is ideal for device scaling. Simulations and Fowler-Nordheim equation are used to analyze the field emission characteristics. The emission is enhanced for both extremely short gaps and sharp emitter tips as expected. The present results for the diode-based system are useful for the design of future gated three terminal devices such as vacuum field emission transistors and field emission displays using SiC. (C) 2017 American Vacuum Society.

收录类别SCI ; EI
语种英语
资助项目Project of National Natural Science Foundation of China[61327811]
WOS研究方向Engineering ; Science & Technology - Other Topics ; Physics
WOS类目Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS记录号WOS:000402053900018
出版者A V S AMER INST PHYSICS
EI入藏号20171503558463
EI主题词Anodes ; Cathodes ; Display devices ; Electrodes ; Electron emission ; Etching ; Field emission cathodes ; Focused ion beams ; Ion beams ; Nanotechnology ; Silicon carbide ; Vacuum technology
EI分类号Vacuum Technology:633 ; Electron Tubes:714.1 ; Computer Peripheral Equipment:722.2 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; High Energy Physics:932.1
WOS关键词FIELD-EMISSION ; NANOSTRUCTURES ; DEPOSITION ; NANOWIRES
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2602
专题信息科学与技术学院_特聘教授组_王跃林组
通讯作者Wang, Yuelin
作者单位
1.Chinese Acad Sci Shanghai, Shanghai Inst Microsyst & Informat Technol, Sci & Technol Microsyst Lab, Shanghai, Peoples R China
2.Univ ShanghaiTech, Sch Informat Sci & Technol, Shanghai 200120, Peoples R China
3.Univ Chinese Acad Sci, Sch Microelect, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Liu, Meng,Li, Tie,Wang, Yuelin. SiC emitters for nanoscale vacuum electronics: A systematic study of cathode-anode gap by focused ion beam etching[J]. JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES,2017,35(3).
APA Liu, Meng,Li, Tie,&Wang, Yuelin.(2017).SiC emitters for nanoscale vacuum electronics: A systematic study of cathode-anode gap by focused ion beam etching.JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES,35(3).
MLA Liu, Meng,et al."SiC emitters for nanoscale vacuum electronics: A systematic study of cathode-anode gap by focused ion beam etching".JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES 35.3(2017).
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