Temperature and Optical Feedback Sensitivity of the Relative Intensity Noise of Epitaxial Quantum Dot Lasers on Ge

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	Temperature and Optical Feedback Sensitivity of the Relative Intensity Noise of Epitaxial Quantum Dot Lasers on Ge
	Yue-Guang Zhou1 ; Chun-Fang Cao 1; Jin-Yi Yan 2; Qian Gong 2; Cheng Wang1
	2018-07-02
会议录名称	2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM, CLEO-PR 2018
卷号	Part F113-CLEOPR 2018
页码	1-2
发表状态	已发表
DOI	/
摘要	This work demonstrates that the relative intensity noise of Ge-based epitaxial InAs quantum dot lasers are weakly sensitive to the temperature, while it is more sensitive to the optical feedback at higher bias currents. © 2018 OSA.
会议录编者/会议主办者	Nanosystem Fabrication Facility (NFF) ; Santec ; The Hongkong University of Science and Technology ; Universal
关键词	Germanium compounds Nanocrystals Semiconductor quantum dots III-V semiconductors Indium arsenide Feedback sensitivity InAs quantum dots Relative intensity noise Laser feedback Quantum dot lasers Pump lasers Optical feedback Epitaxial growth Laser excitation
会议名称	2018 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2018
会议地点	No. 1 Expo Drive, Wanchai, Hong kong
会议日期	July 29, 2018 - August 3, 2018
URL	查看原文
收录类别	EI
语种	英语
资助项目	Shanghai Tobacco Group[17PJ1406500]
出版者	Institute of Electrical and Electronics Engineers Inc., United States
EI入藏号	20192006933225
EI主题词	Quantum dot lasers ; Arsenic compounds ; Germanium compounds ; III-V semiconductors ; Indium arsenide ; Nanocrystals ; Optical feedback ; Semiconductor quantum dots
EI分类号	712.1 Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 744.4.1 Semiconductor Lasers ; 761 Nanotechnology ; 804.2 Inorganic Compounds ; 933.1 Crystalline Solids ; Semiconductor Devices and Integrated Circuits:714.2 ; Semiconductor Lasers:744.4.1 ; Nanotechnology:761 ; Inorganic Compounds:804.2
原始文献类型	Conference article (CA)
来源库	IEEE
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/251796
专题	信息科学与技术学院信息科学与技术学院_PI研究组_王成组信息科学与技术学院_硕士生
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
第一作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Yue-Guang Zhou,Chun-Fang Cao,Jin-Yi Yan,et al. Temperature and Optical Feedback Sensitivity of the Relative Intensity Noise of Epitaxial Quantum Dot Lasers on Ge[C]//Nanosystem Fabrication Facility (NFF), Santec, The Hongkong University of Science and Technology, Universal:Institute of Electrical and Electronics Engineers Inc., United States,2018:1-2.