Composition measurement of fully-strained epitaxial InxGa1-xAsyP1-y/InP layer by temperature dependent X-ray diffraction

doi:10.1016/j.jcrysgro.2022.126888

	Composition measurement of fully-strained epitaxial InxGa1-xAsyP1-y/InP layer by temperature dependent X-ray diffraction
	Lin, Si-Wei1,2 ; Yan, Jin-Yi 1,3; Zhao, Xu-Yi 1,3; Yu, Wen-Fu 1,3; Gong, Qian1,2,3
	2022-12-01
发表期刊	JOURNAL OF CRYSTAL GROWTH (IF:1.7[JCR-2023],1.7[5-Year])
ISSN	0022-0248
EISSN	1873-5002
卷号	599
发表状态	已发表
DOI	10.1016/j.jcrysgro.2022.126888
摘要	We report on a new method for measuring the content of fully-strained InGaAsP/InP layer by analyzing the temperature dependent Omega-2Theta curves measured by X-ray diffraction (XRD). Applying the linear elasticity theory, the content parameters in the quaternary material can be obtained with high precision from a series of multiple XRD data points. For example, in the test sample grown by molecular beam epitaxy, the InGaAsP contents were measured as x = 0.881 ± 0.007, y = 0.308 ± 0.016, which agree with that obtained by the conventional method using XRD and photoluminescence techniques. In principle, the new method can provide higher precision than the conventional method since only high precision XRD data are used.
关键词	A1. Characterization A1. X-ray diffraction A3. Molecular beam epitaxy B2. Semiconducting III-V materials
URL	查看原文
收录类别	EI ; SCIE ; SCI
语种	英语
资助项目	[2021YFB2800500]
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000888080700006
出版者	ELSEVIER
Scopus 记录号	2-s2.0-85140755092
来源库	Scopus
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/243357
专题	信息科学与技术学院_硕士生信息科学与技术学院_特聘教授组_龚谦组
通讯作者	Gong, Qian
作者单位	1.Chinese Acad Sci, Key Lab Terahertz Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China 3.Univ Chinese Acad Sci, Beijing, Peoples R China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Lin, Si-Wei,Yan, Jin-Yi,Zhao, Xu-Yi,et al. Composition measurement of fully-strained epitaxial InxGa1-xAsyP1-y/InP layer by temperature dependent X-ray diffraction[J]. JOURNAL OF CRYSTAL GROWTH,2022,599.
APA	Lin, Si-Wei,Yan, Jin-Yi,Zhao, Xu-Yi,Yu, Wen-Fu,&Gong, Qian.(2022).Composition measurement of fully-strained epitaxial InxGa1-xAsyP1-y/InP layer by temperature dependent X-ray diffraction.JOURNAL OF CRYSTAL GROWTH,599.
MLA	Lin, Si-Wei,et al."Composition measurement of fully-strained epitaxial InxGa1-xAsyP1-y/InP layer by temperature dependent X-ray diffraction".JOURNAL OF CRYSTAL GROWTH 599(2022).