Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy
Lu, Guangyuan1; Wu, Tianru1; Yuan, Qinghong2; Wang, Huishan1,3; Wang, Haomin1; Ding, Feng4; Xie, Xiaoming1,5; Jiang, Mianheng1,5
2015-01
Source PublicationNATURE COMMUNICATIONS
ISSN2041-1723
Volume6
Status已发表
DOI10.1038/ncomms7160
AbstractHexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm(2) by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 mu m(2), approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications.
Indexed BySCI
Language英语
Funding ProjectScience and Technology Commission of Shanghai Municipality[12JC1410100] ; Science and Technology Commission of Shanghai Municipality[12JC1403900]
WOS Research AreaScience & Technology - Other Topics
WOS SubjectMultidisciplinary Sciences
WOS IDWOS:000348832700004
PublisherNATURE PUBLISHING GROUP
WOS KeywordTHERMAL-DECOMPOSITION ; RAMAN-SPECTROSCOPY ; GRAPHENE ; MONOLAYER ; GROWTH ; LAYER ; FILMS ; TEMPERATURE ; RESISTANCE ; DEFECTS
Original Document TypeArticle
Citation statistics
Cited Times:225[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/2344
Collection物质科学与技术学院_特聘教授组_谢晓明组
物质科学与技术学院
Corresponding AuthorXie, Xiaoming
Affiliation1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.E China Normal Univ, Dept Phys, Shanghai 200241, Peoples R China
3.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China
4.Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R China
5.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Corresponding Author AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Lu, Guangyuan,Wu, Tianru,Yuan, Qinghong,et al. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy[J]. NATURE COMMUNICATIONS,2015,6.
APA Lu, Guangyuan.,Wu, Tianru.,Yuan, Qinghong.,Wang, Huishan.,Wang, Haomin.,...&Jiang, Mianheng.(2015).Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy.NATURE COMMUNICATIONS,6.
MLA Lu, Guangyuan,et al."Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy".NATURE COMMUNICATIONS 6(2015).
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