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Grain boundary boosting the thermal stability of Pt/CeO2 thin films
2022
发表期刊NANO RESEARCH (IF:9.5[JCR-2023],9.0[5-Year])
ISSN1998-0124
EISSN1998-0000
卷号16期号:2页码:3278-3286
发表状态已发表
DOI10.1007/s12274-022-4899-9
摘要

Understanding how defect chemistry of oxide material influences the thermal stability of noble metal dopant ions plays an important role in designing high-performance heterogeneous catalytic systems. Here we use in-situ ambient-pressure X-ray photoemission spectroscopy (APXPS) to experimentally determine the role of grain boundary in the thermal stability of platinum doped cerium oxide (Pt/CeO2). The grain boundaries were introduced in Pt/CeO2 thin films by pulsed laser deposition without significantly change of the surface microstructure. The defect level was tuned by the strain field obtained using a highly/low mismatched substrate. The Pt/CeO2 thin film models having well defined crystallographic properties but different grain boundary structural defect levels provide an ideal platform for exploring the evolution of Pt-O-Ce bond with changing the temperature in reducing conditions. We have direct demonstration and explanation of the role of Ce3+ induced by grain boundaries in enhancing Pt2+ stability. We observe that the Pt2+-O-Ce3+ bond provides an ideal coordinated site for anchoring of Pt2+ ions and limits the further formation of oxygen vacancies during the reduction with H-2. Our findings demonstrate the importance of grain boundary in the atomic-scale design of thermally stable catalytic active sites.

关键词platinum doped cerium oxide (Pt/CeO2) pulsed laser deposition epitaxial thin films grain boundaries defect engineering in-situ ambient-pressure X-ray photoemission spectroscopy
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收录类别SCI ; SCOPUS ; SCIE ; EI
语种英语
资助项目Natural Science Foundation of China[11227902] ; Shanghai Key Research Program[20ZR1436700]
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000853447000004
出版者TSINGHUA UNIV PRESS
EI入藏号20223812769590
EI主题词Cerium oxide
EI分类号531 Metallurgy and Metallography ; 547.1 Precious Metals ; 641.1 Thermodynamics ; 741.3 Optical Devices and Systems ; 744.1 Lasers, General ; 744.9 Laser Applications ; 801 Chemistry ; 804.2 Inorganic Compounds ; 933.1 Crystalline Solids ; 951 Materials Science
原始文献类型Journal article (JA)
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/231973
专题物质科学与技术学院_博士生
物质科学与技术学院_PI研究组_杨永组
物质科学与技术学院_PI研究组_杨波组
物质科学与技术学院_PI研究组_杨楠组
物质科学与技术学院_PI研究组_于奕组
物质科学与技术学院_硕士生
通讯作者Aruta, Carmela; Yang, Nan
作者单位
1.ShanghaiTech Univ, Sch Phys Sci & Technol, Electrochem Thin Film Grp, Shanghai 201210, Peoples R China
2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
4.TASC Natl Lab, CNR IOM, I-34149 Trieste, Italy
5.UOS Roma, CNR Spin, Area Ric Tor Vergata, I-00133 Rome, Italy
第一作者单位物质科学与技术学院
通讯作者单位物质科学与技术学院
第一作者的第一单位物质科学与技术学院
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GB/T 7714
Wang, Luyao,Li, Xiaobao,Hu, Xiangcheng,et al. Grain boundary boosting the thermal stability of Pt/CeO2 thin films[J]. NANO RESEARCH,2022,16(2):3278-3286.
APA Wang, Luyao.,Li, Xiaobao.,Hu, Xiangcheng.,Chen, Shuyue.,Qiu, Zhehao.,...&Yang, Nan.(2022).Grain boundary boosting the thermal stability of Pt/CeO2 thin films.NANO RESEARCH,16(2),3278-3286.
MLA Wang, Luyao,et al."Grain boundary boosting the thermal stability of Pt/CeO2 thin films".NANO RESEARCH 16.2(2022):3278-3286.
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