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ShanghaiTech University Knowledge Management System
Giant Influence of Clustering and Anti-Clustering of Disordered Surface Roughness on Electronic Tunneling | |
2022-07-01 | |
发表期刊 | CHINESE PHYSICS LETTERS (IF:3.5[JCR-2023],2.1[5-Year]) |
ISSN | 0256-307X |
EISSN | 1741-3540 |
卷号 | 39期号:8 |
发表状态 | 已发表 |
DOI | 10.1088/0256-307X/39/8/087301 |
摘要 | This work reveals the giant influence of spatial distribution of disordered surface roughness on electron tunneling, which is of immediate relevance to the magneto tunnel device and imaging technologies. We calculate the spin-dependent tunneling in Fe/vacuum/Fe junction with disordered surface roughness with the first-principles non-equilibrium dynamical cluster theory. It is found that, at high concentration of surface roughness, different spatial distributions, including the clustered, anti-clustered and completely random roughness characterized by Warren-Cowley parameters, present large deviations from each other in all spin channels. By changing from clustered to anti-clustered roughness, it is surprising that spin polarization of tunneling in parallel configuration (PC) can be drastically reversed from -0.52 to 0.93, while complete randomness almost eliminates the polarization. It is found that the anti-clustered roughness can dramatically quench the tunneling of minority spin in both PC and anti-PC by orders of magnitude, but significantly enhance the transmission of majority spin in PC (by as large as 40%) compared to the results of clustered roughness, presenting distinct influences of differently correlated surface roughness. The spatial correlation of disordered surface roughness can significantly modify the surface resonance of Fe minority spin. |
URL | 查看原文 |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[ |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
WOS记录号 | WOS:000833933000001 |
出版者 | IOP Publishing Ltd |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/214789 |
专题 | 物质科学与技术学院_博士生 物质科学与技术学院_PI研究组_柯友启组 |
通讯作者 | Ke, Youqi |
作者单位 | 1.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 3.Beijing Computat Sci Res Ctr, Beijing 100193, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
通讯作者单位 | 物质科学与技术学院 |
第一作者的第一单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Zhang, Yu,Zhang, Qingyun,Ke, Youqi,et al. Giant Influence of Clustering and Anti-Clustering of Disordered Surface Roughness on Electronic Tunneling[J]. CHINESE PHYSICS LETTERS,2022,39(8). |
APA | Zhang, Yu,Zhang, Qingyun,Ke, Youqi,&Xia, Ke.(2022).Giant Influence of Clustering and Anti-Clustering of Disordered Surface Roughness on Electronic Tunneling.CHINESE PHYSICS LETTERS,39(8). |
MLA | Zhang, Yu,et al."Giant Influence of Clustering and Anti-Clustering of Disordered Surface Roughness on Electronic Tunneling".CHINESE PHYSICS LETTERS 39.8(2022). |
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